Conductive film and display apparatus provided with same

ABSTRACT

The present invention discloses a conductive film and a display apparatus provided with the conductive film. A conductive film is disposed on a display panel of a display apparatus, and has a base body, and a conductive section formed on one of the main surfaces of the base body. The conductive section has a mesh pattern composed of fine metal lines, and the fine metal lines have a tilt of 30-44° with respect to the alignment direction of pixels of the display apparatus.

CROSS-REFERENCE TO RELATED APPLICATIONS AND PRIORITY CLAIMS

This application is a Continuation of U.S. application Ser. No.13/939,607, filed Jul. 11, 2013, which is a Continuation ofInternational Application No. PCT/JP2012/050929 filed on Jan. 18, 2012,which was published under PCT Article 21(2) in Japanese, which is basedupon and claims the benefit of priority from Japanese PatentApplications No. 2011-007675 filed on Jan. 18, 2011, No. 2011-007678filed on Jan. 18, 2011, No. 2011-007685 filed on Jan. 18, 2011 and No.2011-105374 filed on May 10, 2011, the contents all of which areincorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a conductive film and a display device(apparatus) using the same.

BACKGROUND ART

Conductive films, to be disposed on a display panel of a display device,include conductive electromagnetic-shielding films (see, e.g., JapaneseLaid-Open Patent Publication Nos. 2008-282924 and 2009-094467),conductive touch panel films (see, e.g., Japanese Laid-Open PatentPublication No. 2010-108877), and the like.

In such conductive films, a lattice pattern is formed on a transparentsubstrate. In Japanese Laid-Open Patent Publication No. 2008-282924, amoire preventing part is arranged adjacent to an intersection of alattice pattern. In Japanese Laid-Open Patent Publication No.2009-094467, a moire preventing film having a moire preventing part isattached to an electromagnetic-shielding film having a lattice patternto prevent moire generation.

SUMMARY OF INVENTION

An object of the present invention is to provide a conductive film,which can have a simple structure different from the structures of theabove patent documents, can be attached to a display panel of a commondisplay device while preventing moire generation, and can be producedwith high yield, and to provide a display device having the conductivefilm.

[1] A conductive film according to a first aspect of the presentinvention, comprising a substrate and a conductive part disposed on onemain surface thereof, wherein the conductive part contains two or moreconductive patterns composed of a thin metal wire, the conductivepatterns extend in a first direction and are arranged in a seconddirection perpendicular to the first direction, the conductive patternseach contain a combination of two or more lattices, the lattices eachhave a rhombic shape, and at least one side of each lattice is at anangle of 30° to 60° with respect to the first direction.

[2] In the first aspect, it is preferred that at least one side of eachlattice is at an angle of 30° to 44° with respect to the firstdirection.

[3] In the first aspect, it is preferred that at least one side of eachlattice is at an angle of 32° to 39° with respect to the firstdirection.

[4] In the first aspect, it is preferred that at least one side of eachlattice is at an angle of 46° to 60° with respect to the firstdirection.

[5] In the first aspect, it is preferred that at least one side of eachlattice is at an angle of 51° to 58° with respect to the firstdirection.

[6] In the first aspect, the conductive patterns may each contain two ormore sensing portions connected in series in the first direction, andthe sensing portions may each contain a combination of two or morelattices.

[7] A conductive film according to a second aspect of the presentinvention, comprising a substrate, a first conductive part disposed onone main surface of the substrate, and a second conductive part disposedon the other main surface of the substrate, wherein the first conductivepart contains two or more first conductive patterns, the firstconductive patterns extend in a first direction and are arranged in asecond direction perpendicular to the first direction, the secondconductive part contains two or more second conductive patterns, thesecond conductive patterns extend in the second direction and arearranged in the first direction, the first and second conductivepatterns each contain a combination of two or more lattices, thelattices each have a rhombic shape, and at least one side of eachlattice is at an angle of 30° to 60° with respect to the firstdirection.

[8] In the second aspect, the first conductive patterns may each containtwo or more first sensing portions connected in series in the firstdirection, the second conductive patterns may each contain two or moresecond sensing portions connected in series in the second direction, andthe first and second sensing portions may each contain a combination oftwo or more lattices.

[9] A conductive film according to a third aspect of the presentinvention, comprising a substrate and a conductive part disposed on onemain surface of the substrate, wherein the conductive part contains amesh pattern having an opening, and the opening has a rhombic shapehaving angles of 60° to 120°.

[10] A conductive film according to a fourth aspect of the presentinvention, comprising a substrate and a conductive part disposed on onemain surface of the substrate, wherein the conductive part contains twoor more conductive patterns composed of a thin metal wire, theconductive patterns extend in a first direction and are arranged in asecond direction perpendicular to the first direction, the conductivepatterns each contain two or more sensing portions connected in thefirst direction, and each of the sensing portions has a second directionlength Lv and a first direction length Lh, and satisfies the conditionof 0.57<Lv/Lh<1.74.

[11] In the fourth aspect, it is preferred that each sensing portionsatisfies the condition of 0.57<Lv/Lh<1.00.

[12] A conductive film according to a fifth aspect of the presentinvention, comprising a substrate, a first conductive part disposed onone main surface of the substrate, and a second conductive part disposedon the other main surface of the substrate, wherein the first conductivepart contains two or more first conductive patterns, the firstconductive patterns extend in a first direction and are arranged in asecond direction perpendicular to the first direction, the secondconductive part contains two or more second conductive patterns, thesecond conductive patterns extend in the second direction and arearranged in the first direction, the first conductive patterns eachcontain two or more first sensing portions connected in the firstdirection, the second conductive patterns each contain two or moresecond sensing portions connected in the second direction, each of thefirst sensing portions has a second direction length Lva and a firstdirection length Lha, and satisfies the condition of 0.57<Lva/Lha<1.74,and each of the second sensing portions has a second direction lengthLvb and a first direction length Lhb, and satisfies the condition of0.57<Lvb/Lhb<1.74.

[13] In the fifth aspect, it is preferred that each first sensingportion satisfies the condition of 0.57<Lva/Lha<1.00, and each secondsensing portion satisfies the condition of 0.57<Lvb/Lhb<1.00.

[14] In the fourth or fifth aspect, it is preferred that the sensingportions each contain a plurality of lattices, and each lattice has asecond direction length Lvs and a first direction length Lhs andsatisfies the condition of 0.57<Lvs/Lhs<1.74.

[15] A conductive film according to a sixth aspect of the presentinvention, comprising a substrate and a conductive part disposed on onemain surface of the substrate, wherein the conductive part contains amesh pattern having an opening, the opening has a rhombic shape, and therhombic shape has one diagonal line length Lvp and the other diagonalline length Lhp and satisfies the condition of 0.57<Lvp/Lhp<1.74.

[16] A display device according to a seventh aspect of the presentinvention, comprising a display panel and thereon a conductive film,wherein the conductive film contains a conductive part having a meshpattern composed of a thin metal wire, and the thin metal wire is at anangle of 30° to 44° with respect to an arrangement direction of pixelsin the display device.

[17] In the seventh aspect, it is preferred that the thin metal wire isat an angle of 32° to 39° with respect to the arrangement direction ofthe pixels in the display device.

In general, a conductive film is required to obtain a display devicewith an electromagnetic-shielding function, a touch panel function, orthe like. Conventional conductive films having a mesh pattern or thelike may cause moire on the display device. In contrast, the conductivefilm of the present invention can be used on the display panel whilepreventing the moire generation. Furthermore, the conductive film of thepresent invention can be produced with high yield.

In addition, the display device of the present invention can be used asa low-resistance, electromagnetic-shielding or touch-panel device. Thedisplay device can be used as a touch-panel display without moiregeneration.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view of a conductive film according to a firstembodiment;

FIG. 2 is a partially omitted cross-sectional view of the conductivefilm;

FIG. 3 is a partially omitted plan view of a pixel array in a displaydevice, on which the conductive film is disposed;

FIG. 4 is a view for illustrating a size (an aspect ratio) of a meshshape (a rhombus);

FIG. 5 is a partially omitted plan view of the conductive film disposedon the display device;

FIG. 6 is an exploded perspective view of a touch panel having aconductive film stack containing the conductive film of the firstembodiment (a first conductive film stack);

FIG. 7 is a partially omitted exploded perspective view of the firstconductive film stack;

FIG. 8A is a partially omitted cross-sectional view of an example of thefirst conductive film stack, and FIG. 8B is a partially omittedcross-sectional view of another example of the first conductive filmstack;

FIG. 9 is a plan view of a pattern example of a first conductive partformed on a first conductive film according to the first embodiment;

FIG. 10 is a plan view of a small lattice (an opening in a meshpattern);

FIG. 11 is a view for illustrating a size (an aspect ratio) of a firstlarge lattice;

FIG. 12 is a view for illustrating a size (an aspect ratio) of the smalllattice;

FIG. 13 is a plan view of a pattern example of a second conductive partformed on a second conductive film according to the first embodiment;

FIG. 14 is a view for illustrating a size (an aspect ratio) of a secondlarge lattice;

FIG. 15 is a partially omitted plan view of the first conductive filmstack formed by combining the first and second conductive films of thefirst embodiment;

FIG. 16 is an explanatory view of one line formed by first and secondauxiliary wires;

FIG. 17 is a partially omitted exploded perspective view of a conductivefilm stack according to a second embodiment (a second conductive filmstack);

FIG. 18A is a partially omitted cross-sectional view of an example ofthe second conductive film stack, and FIG. 18B is a partially omittedcross-sectional view of another example of the second conductive filmstack;

FIG. 19 is a plan view of a pattern example of a first conductive partformed on a first conductive film according to the second embodiment;

FIG. 20 is a plan view of a pattern example of a second conductive partformed on a second conductive film according to the second embodiment;and

FIG. 21 is a partially omitted plan view of the second conductive filmstack formed by combining the first and second conductive films of thesecond embodiment.

DESCRIPTION OF EMBODIMENTS

Several embodiments of the conductive film and the display devicecontaining the conductive film of the present invention will bedescribed below with reference to FIGS. 1 to 21. It should be notedthat, in this description, a numeric range of “A to B” includes both thenumeric values A and B as the lower limit and upper limit values.

A first embodiment will be described below with reference to FIGS. 1 to16.

As shown in FIGS. 1 and 2, a conductive film 10 according to the firstembodiment has a transparent substrate 12 (see FIG. 2) and a conductivepart 14 formed on one main surface of the transparent substrate 12. Theconductive part 14 has a mesh pattern 20 containing thin wires of ametal (hereinafter referred to as the thin metal wires 16) and openings18. For example, the thin metal wires 16 contain gold (Au), silver (Ag),or copper (Cu).

Specifically, in the conductive part 14, a plurality of first thin metalwires 16 a and a plurality of second thin metal wires 16 b are crossedto form the mesh pattern 20, the first thin metal wires 16 a extend in afirst oblique direction (an x direction shown in FIG. 1) and arearranged in a second oblique direction (a y direction shown in FIG. 1)at a pitch Ps, and the second thin metal wires 16 b extend in the secondoblique direction and are arranged in the first oblique direction at thepitch Ps. In this case, the first oblique direction is at an angle of+30° to +60° with respect to a reference direction (e.g. a horizontaldirection), and the second oblique direction is at an angle of −30° to−60° with respect to the reference direction. Consequently, in the meshpattern 20, each of mesh shapes 22, which is a combination of oneopening 18 and four thin metal wires 16 surrounding the one opening 18,is a rhombic shape having vertex angles of 60° to 120°.

The conductive film 10 can be used as an electromagnetic-shielding filmof a display device 30 shown in FIG. 3, a conductive film of a touchpanel, or the like.

Examples of such display devices 30 include liquid crystal displays,plasma displays, organic EL displays, and inorganic EL displays.

The pitch Ps (hereinafter referred to also as the thin wire pitch Ps)may be selected within a range of 100 to 400 μm. The line width of thethin metal wire 16 may be 30 μm or less. In a case where the conductivefilm 10 is used as the electromagnetic-shielding film, the line width ofthe thin metal wire 16 is preferably 1 to 20 μm, more preferably 1 to 9μm, further preferably 2 to 7 μm. In a case where the conductive film 10is used as the conductive touch panel film, the line width of the thinmetal wire 16 is preferably 0.1 to 15 μm, more preferably 1 to 9 μm,further preferably 2 to 7 μm.

The rhombic mesh shape 22 has two narrow angles of the four vertexangles, and half of each narrow angle is 30° to 44°. Thus, in a casewhere an imaginary line 24 extends in the opening 18 in the horizontaldirection and connects a plurality of intersection points in the meshpattern 20, an angle θ (an oblique angle θ) between the imaginary line24 and the first thin metal wire 16 a is 30° to 44°.

As shown with partial omission in FIG. 3, a plurality of pixels 32 arearranged in a matrix in the display device 30. One pixel 32 containsthree subpixels (a red subpixel 32 r, a green subpixel 32 g, and a bluesubpixel 32 b), which are arranged in the horizontal direction. Eachsubpixel has a rectangular shape extending in the vertical direction.The arrangement pitch of the pixels 32 in the horizontal direction (thehorizontal pixel pitch Ph) and the arrangement pitch of the pixels 32 inthe vertical direction (the vertical pixel pitch Pv) are approximatelyequal to each other. Thus, a combination of one pixel 32 and a blackmatrix surrounding the pixel 32 (a shaded region 34) forms a squareshape. Each pixel 32 does not have an aspect ratio of 1, and has ahorizontal (lateral) length larger than the vertical (longitudinal)length.

The size of the rhombus of the mesh shape 22 will be described belowwith reference to FIG. 4. In the rhombus, when one diagonal lineextending in the vertical direction has a length Lvp and the otherdiagonal line extending in the horizontal direction has a length Lhp,the size, i.e. the aspect ratio (Lvp/Lhp), of the rhombus satisfies thecondition of 0.57<Lvp/Lhp<1.74.

In a case where the pixels 32 are arranged in the horizontal directionin the display device 30 (see FIG. 3), to which a touch panel 50 isattached, the aspect ratio (Lvp/Lhp) of the rhombus satisfies thecondition of 0.57<Lvp/Lhp<1.00 or 1.00<Lvp/Lhp<1.74, and more preferablysatisfies the condition of 0.62<Lvp/Lhp<0.81 or 1.23<Lvp/Lhp<1.61.

As shown in FIG. 5, in a case where the conductive film 10 is disposedon a display panel of the display device 30 having such a pixel array,the thin metal wire 16 forms a certain oblique angle θ with thehorizontal arrangement direction (the m direction) of the pixels 32 inthe display device 30. As shown in FIG. 1, the imaginary line 24 extendsin the opening 18 in the horizontal direction and connects a pluralityof the intersection points in the mesh pattern 20, and the angle θbetween the imaginary line 24 and the first thin metal wire 16 a is 30°to 60°, preferably 30° to 44°. Therefore, as shown in FIG. 4, the thinmetal wire 16 is angled at 30° to 60°, preferably 30° to 44°, withrespect to the horizontal arrangement direction (the m direction) of thepixels 32 in the display device 30. The thin wire pitch Ps of theconductive film 10 is approximately equal or close to the diagonallength La1 of one pixel 32 (or the diagonal length La2 of two adjacentpixels 32 arranged in the vertical direction) in the display device 30.Furthermore, the arrangement direction of the thin metal wires 16 in theconductive film 10 is approximately equal or close to the direction ofthe diagonal line of one pixel 32 (or the diagonal line of two adjacentpixels 32 arranged in the vertical direction) in the display device 30.Consequently, the arrangement period difference between the pixels 32and the thin metal wires 16 can be reduced to prevent moire generation.

For example, in a case where the conductive film 10 is used as theelectromagnetic-shielding film, the conductive film 10 is disposed onthe display panel of the display device 30. In this case, as describedabove, the arrangement period difference between the pixels 32 and thethin metal wires 16 can be reduced to prevent the moire generation. Inaddition, since the thin metal wires 16 in the mesh pattern 20 has apitch Ps of 100 to 400 μm and a line width of 30 μm or less, theelectromagnetic-shielding film can exhibit both of a highelectromagnetic-shielding property and a high light transmittance.

A display device having a touch panel such as a projected capacitivetouch panel will be described below with reference to FIGS. 6 to 16.

A touch panel 50 has a sensor body 52 and a control circuit such as anintegrated circuit (not shown). As shown in FIGS. 6, 7, and 8A, thesensor body 52 contains a conductive film stack 54 prepared bylaminating a first conductive film 10A and a second conductive film 10Bto be hereinafter described, and further contains thereon a protectivelayer 56 (not shown in FIG. 8A). The conductive film stack 54 and theprotective layer 56 can be disposed on a display panel 58 of a displaydevice 30 such as a liquid crystal display. As viewed from above, thesensor body 52 has a sensing region 60 corresponding to a display screen58 a of the display panel 58 and a terminal wiring region 62 (aso-called frame) corresponding to the periphery of the display panel 58.

As shown in FIGS. 7 and 9, in the touch panel 50, the first conductivefilm 10A has a first conductive part 14A formed on one main surface of afirst transparent substrate 12A (see FIG. 8A). The first conductive part14A contains two or more first conductive patterns 64A (mesh patterns)and first auxiliary patterns 66A. The first conductive patterns 64Aextend in the horizontal direction (the m direction), are arranged inthe vertical direction (the n direction) perpendicular to the horizontalor m direction, each contain a large number of lattices, and arecomposed of the thin metal wires 16. The first auxiliary patterns 66Aare arranged around the first conductive patterns 64A and are composedof the thin metal wires 16.

The first conductive pattern 64A has two or more small lattices 70. Inthe example of FIGS. 7 and 9, the first conductive pattern 64A containstwo or more first large lattices 68A (first sensing portions). The firstlarge lattices 68A are connected in series in the horizontal direction,and each contain a combination of two or more small lattices 70. Theabove first auxiliary pattern 66A is formed around a side of the firstlarge lattice 68A and is not connected to the first large lattice 68A.For example, the m direction corresponds to the horizontal or verticaldirection of the projected capacitive touch panel 50 or the displaypanel 58 equipped therewith to be hereinafter described (see FIG. 6).

The first conductive pattern 64A is not limited to the example using thefirst large lattices 68A. For example, the first conductive pattern 64Amay be such that a large number of the small lattices 70 are arranged toform a strip-shaped mesh pattern, and a plurality of the strip-shapedmesh patterns are arranged in parallel and are isolated from each otherby insulations. For example, two or more of strip-shaped firstconductive patterns 64A may each extend from a terminal in the mdirection and may be arranged in the n direction.

In this example, the small lattice 70 is shown as the smallest rhombusin the drawings, and has a shape equal or similar to the above meshshape 22 (see FIGS. 1 and 4). As shown in FIG. 10, in the small lattice70, the angle θ between at least one side (of first to fourth sides 70 ato 70 d) and the first direction (the m direction) is 30° to 60°. In acase where the m direction is equal to the pixel arrangement directionof the display device 30 (see FIG. 5) having the touch panel 50, theangle θ is 30° to 44° or 46° to 60°, more preferably 32° to 39° or 51°to 58°.

The size of the first large lattice 68A will be described below withreference to FIG. 11. Among four sides (first to fourth sides 69 a to 69d) of the first large lattice 68A, the first side 69 a and the secondside 69 b are arranged adjacent to each other in the horizontaldirection (the m direction), and the intersection of the first side 69 aand the second side 69 b corresponds to a first corner 71 a. Similarly,the third side 69 c (facing the first side 69 a) and the fourth side 69d (facing the second side 69 b) are arranged adjacent to each other inthe horizontal direction, and the intersection of the third side 69 cand the fourth side 69 d corresponds to a second corner 71 b.

Furthermore, among the four sides (the first to fourth sides 69 a to 69d) of the first large lattice 68A, the first side 69 a and the fourthside 69 d are arranged adjacent to each other in the vertical direction(the n direction), and the intersection of an extended line of the firstside 69 a and the fourth side 69 d corresponds to a third corner 71 c.Similarly, the second side 69 b and the third side 69 c are arrangedadjacent to each other in the vertical direction, and the intersectionof the second side 69 b and an extended line of the third side 69 ccorresponds to a fourth corner 71 d.

The second direction length of the first large lattice 68A correspondsto a distance Lva between the first corner 71 a and the second corner 71b in the vertical direction, and the first direction length of the firstlarge lattice 68A corresponds to a distance Lha between the third corner71 c and the fourth corner 71 d in the horizontal direction.

In this case, the size, i.e. the aspect ratio (Lva/Lha), of the firstlarge lattice 68A satisfies the condition of 0.57<Lva/Lha<1.74.

In a case where the horizontal direction (the m direction) is equal tothe pixel arrangement direction of the display device 30 (see FIG. 6)having the touch panel 50, the aspect ratio (Lva/Lha) of the first largelattice 68A satisfies the condition of 0.57<Lva/Lha<1.00 or1.00<Lva/Lha<1.74, and more preferably satisfies the condition of0.62<Lva/Lha<0.81 or 1.23<Lva/Lha<1.61.

Also the small lattice 70 satisfies a similar condition. As shown inFIG. 12, when one diagonal line 70 v extending in the vertical directionhas a length Lvs and the other diagonal line 70 h extending in thehorizontal direction has a length Lhs, the size, i.e. the aspect ratio(Lvs/Lhs), of the small lattice 70 satisfies the condition of0.57<Lvs/Lhs<1.74.

In a case where the horizontal direction is equal to the pixelarrangement direction of the display device 30 (see FIG. 6) having thetouch panel 50, also the aspect ratio (Lvs/Lhs) of the small lattice 70satisfies the condition of 0.57<Lvs/Lhs<1.00 or 1.00<Lvs/Lhs<1.74, andmore preferably satisfies the condition of 0.62<Lvs/Lhs<0.81 or1.23<Lvs/Lhs<1.61.

As described above, the line width of the small lattice 70 (i.e. thethin metal wire 16) may be 30 μm or less. The side length of the smalllattice 70 may be selected within a range of 100 to 400 μm.Incidentally, in the first large lattice 68A, the first obliquedirection (the x direction) is parallel to the first side 69 a (and thethird side 69 c), and the second oblique direction (the y direction) isparallel to the second side 69 b (and the fourth side 69 d).

In the case of using the first large lattices 68A in the firstconductive patterns 64A, for example, as shown in FIG. 9, firstconnections 72A composed of the thin metal wires 16 are formed betweenthe first large lattices 68A, and each adjacent two of the first largelattices 68A are electrically connected by the first connection 72A. Thefirst connection 72A contains a medium lattice 74, and the size of themedium lattice 74 corresponds to the total size of n small lattices 70(in which n is a real number larger than 1) arranged in the secondoblique direction (the y direction). A first absent portion 76A (aportion provided by removing one side from the small lattice 70) isformed between the medium lattice 74 and a side of the first largelattice 68A extending along the first oblique direction. In the exampleof FIG. 9, the size of the medium lattice 74 corresponds to the totalsize of three small lattices 70 arranged in the second obliquedirection.

An electrically isolated first insulation 78A is disposed between theadjacent first conductive patterns 64A.

The first auxiliary pattern 66A contains a plurality of first auxiliarywires 80A having an axis direction parallel to the second obliquedirection (arranged along the side of the first large lattice 68Aparallel to the first oblique direction), a plurality of first auxiliarywires 80A having an axis direction parallel to the first obliquedirection (arranged along the side of the first large lattice 68Aparallel to the second oblique direction), and two first L-shapedpatterns 82A arranged facing each other. Each of the first L-shapedpatterns 82A is formed by combining two first auxiliary wires 80A intoan L shape in the first insulation 78A.

The side length of the first large lattice 68A is preferably 3 to 10 mm,more preferably 4 to 6 mm. When the side length is less than the lowerlimit, for example, in the case of using the first conductive film 10Ain a touch panel, the first large lattices 68A exhibit a loweredelectrostatic capacitance in the detection process, and the touch panelis likely to cause a detection trouble. On the other hand, when the sidelength is more than the upper limit, the position detection accuracy maybe deteriorated. For the same reasons, the side length of each smalllattice 70 in the first large lattices 68A is preferably 100 to 400 μmas described above, further preferably 150 to 300 μm, most preferably210 to 250 μm. When the side length of the small lattice 70 is withinthis range, the first conductive film 10A has high transparency andthereby can be suitably used at the front of a display device withexcellent visibility.

As shown in FIG. 7, in the first conductive film 10A having the abovestructure, in one end of each first conductive pattern 64A, the firstconnection 72A is not formed on the open end of the first large lattice68A. In the other end of the first conductive pattern 64A, the end ofthe first large lattice 68A is electrically connected to a firstterminal wiring pattern 86 a composed of the thin metal wire 16 by afirst wire connection 84 a.

Thus, as shown in FIGS. 6 and 7, in the first conductive film 10A usedin the touch panel 50, a large number of the above first conductivepatterns 64A are arranged in the sensing region 60, and a plurality ofthe first terminal wiring patterns 86 a extend from the first wireconnections 84 a in the terminal wiring region 62.

In the example of FIG. 6, the first conductive film 10A and the sensingregion 60 each have a rectangular shape as viewed from above. In theterminal wiring region 62, a plurality of first terminals 88 a arearranged in the longitudinal center in the length direction of theperiphery on one long side of the first conductive film 10A. The firstwire connections 84 a are arranged in a straight line in the n directionalong one long side of the sensing region 60 (a long side closest to theone long side of the first conductive film 10A). The first terminalwiring pattern 86 a extends from each first wire connection 84 a to thecenter of the one long side of the first conductive film 10A, and iselectrically connected to the corresponding first terminal 88 a.

On the other hand, as shown in FIGS. 7, 8A, and 13, the secondconductive film 10B has a second conductive part 14B formed on one mainsurface of a second transparent substrate 12B (see FIG. 8A). The secondconductive part 14B contains two or more second conductive patterns 64B(mesh patterns) and second auxiliary patterns 66B. The second conductivepatterns 64B extend in the vertical direction (the n direction), arearranged in the horizontal direction (the m direction), each contain alarge number of lattices, and are composed of the thin metal wires 16.The second auxiliary patterns 66B are arranged around the secondconductive patterns 64B and are composed of the thin metal wires 16.

The second conductive pattern 64B has two or more small lattices 70. Inthe example of FIGS. 7 and 13, the second conductive pattern 64Bcontains two or more second large lattices 68B (second sensingportions). The second large lattices 68B are connected in series in thevertical direction (the n direction), and each contain a combination oftwo or more small lattices 70. The above second auxiliary pattern 66B isformed around a side of the second large lattice 68B and is notconnected to the second large lattice 68B.

Also the second conductive pattern 64B is not limited to the exampleusing the second large lattices 68B. For example, the second conductivepattern 64B may be such that a large number of the small lattices 70 arearranged to form a strip-shaped mesh pattern, and a plurality of thestrip-shaped mesh patterns are arranged in parallel and are isolatedfrom each other by insulations. For example, two or more of strip-shapedsecond conductive patterns 64B may each extend from a terminal in the ndirection and may be arranged in the m direction.

The size of the second large lattice 68B will be described below withreference to FIG. 14. Among four sides (fifth to eighth sides 69 e to 69h) of the second large lattice 68B, the fifth side 69 e and the sixthside 69 f are arranged adjacent to each other in the horizontaldirection, and the intersection of the fifth side 69 e and an extendedline of the sixth side 69 f corresponds to a fifth corner 71 e.Similarly, the seventh side 69 g (facing the fifth side 69 e) and theeighth side 69 h (facing the sixth side 69 f) are arranged adjacent toeach other in the horizontal direction, and the intersection of theseventh side 69 g and an extended line of the eighth side 69 hcorresponds to a sixth corner 71 f.

Furthermore, among the four sides (the fifth to eighth sides 69 e to 69h) of the second large lattice 68B, the fifth side 69 e and the eighthside 69 h are arranged adjacent to each other in the vertical direction,and the intersection of the fifth side 69 e and the eighth side 69 hcorresponds to a seventh corner 71 g. Similarly, the sixth side 69 f andthe seventh side 69 g are arranged adjacent to each other in thevertical direction, and the intersection of the sixth side 69 f and theseventh side 69 g corresponds to an eighth corner 71 h.

The second direction length of the second large lattice 68B correspondsto a distance Lvb between the fifth corner 71 e and the sixth corner 71f in the vertical direction (the n direction), and the first directionlength of the second large lattice 68B corresponds to a distance Lhbbetween the seventh corner 71 g and the eighth corner 71 h in thehorizontal direction (the m direction).

In this case, the size, i.e. the aspect ratio (Lvb/Lhb), of the secondlarge lattice 68B satisfies the condition of 0.57<Lvb/Lhb<1.74.

In a case where the horizontal direction (the m direction) is equal tothe pixel arrangement direction of the display device 30 (see FIG. 6)having the touch panel 50, the aspect ratio (Lvb/Lhb) of the secondlarge lattice 68B satisfies the condition of 0.57<Lvb/Lhb<1.00 or1.00<Lvb/Lhb<1.74, and more preferably satisfies the condition of0.62<Lvb/Lhb<0.81 or 1.23<Lvb/Lhb<1.61.

Incidentally, in the second large lattice 68B, the first obliquedirection (the x direction) is parallel to the fifth side 69 e (and theseventh side 69 g), and the second oblique direction (the y direction)is parallel to the sixth side 69 f (and the eighth side 69 h).

In the case of using the second large lattices 68B in the secondconductive patterns 64B, for example, as shown in FIG. 13, secondconnections 72B composed of the thin metal wires 16 are formed betweenthe second large lattices 68B, and each adjacent two of the second largelattices 68B are electrically connected by the second connection 72B.The second connection 72B contains a medium lattice 74, and the size ofthe medium lattice 74 corresponds to the total size of n small lattices70 (in which n is a real number larger than 1) arranged in the firstoblique direction (the x direction). A second absent portion 76B (aportion provided by removing one side from the small lattice 70) isformed between the medium lattice 74 and a side of the second largelattice 68B extending along the second oblique direction.

An electrically isolated second insulation 78B is disposed between theadjacent second conductive patterns 64B.

The second auxiliary pattern 66B contains a plurality of secondauxiliary wires 80B having an axis direction parallel to the secondoblique direction (arranged along the side of the second large lattice68B parallel to the first oblique direction), a plurality of secondauxiliary wires 80B having an axis direction parallel to the firstoblique direction (arranged along the side of the second large lattice68B parallel to the second oblique direction), and two second L-shapedpatterns 82B arranged facing each other. Each of the second L-shapedpatterns 82B is formed by combining two second auxiliary wires 80B intoan L shape in the second insulation 78B.

As shown in FIGS. 6 and 7, in the second conductive film 10B having theabove structure, for example, in each of one end of each alternate(odd-numbered) second conductive pattern 64B and the other end of eacheven-numbered second conductive pattern 64B, the second connection 72Bis not formed on the open end of the second large lattice 68B. In eachof the other end of each odd-numbered second conductive pattern 64B andone end of each even-numbered second conductive pattern 64B, the end ofthe second large lattice 68B is electrically connected to a secondterminal wiring pattern 86 b composed of the thin metal wires 16 by asecond wire connection 84 b.

Thus, as shown in FIG. 7, in the second conductive film 10B used in thetouch panel 50, a large number of the above second conductive patterns64B are arranged in the sensing region 60, and a plurality of the secondterminal wiring patterns 86 b extend from the second wire connections 84b in the terminal wiring region 62.

As shown in FIG. 6, in the terminal wiring region 62, a plurality ofsecond terminals 88 b are arranged in the longitudinal center in thelength direction of the periphery on one long side of the secondconductive film 10B. For example, the odd-numbered second wireconnections 84 b are arranged in a straight line in the m directionalong one short side of the sensing region 60 (a short side closest toone short side of the second conductive film 10B), and the even-numberedsecond wire connections 84 b are arranged in a straight line in the mdirection along the other short side of the sensing region 60 (a shortside closest to the other short side of the second conductive film 10B).

For example, each odd-numbered second conductive pattern 64B isconnected to the corresponding odd-numbered second wire connection 84 b,and each even-numbered second conductive pattern 64B is connected to thecorresponding even-numbered second wire connection 84 b. The secondterminal wiring patterns 86 b are drawn from the odd-numbered andeven-numbered second wire connections 84 b to the center of one longside of the second conductive film 10B, and are each electricallyconnected to the corresponding second terminals 88 b.

The first terminal wiring patterns 86 a may be arranged in the samemanner as the above second terminal wiring patterns 86 b, and the secondterminal wiring patterns 86 b may be arranged in the same manner as theabove first terminal wiring patterns 86 a.

The side length of the second large lattice 68B is preferably 3 to 10mm, more preferably 4 to 6 mm, as with the first large lattice 68A. Whenthe side length is less than the lower limit, the second large lattices68B are likely to exhibit a lowered electrostatic capacitance to cause adetection trouble in the detection process. On the other hand, when theside length is more than the upper limit, the position detectionaccuracy may be deteriorated. For the same reasons, the side length ofeach small lattice 70 in the second large lattices 68B is preferably 100to 400 μm, further preferably 150 to 300 μm, most preferably 210 to 250μm. When the side length of the small lattice 70 is within this range,the second conductive film 10B has high transparency and thereby can besuitably used with excellent visibility on the display panel 58 of thedisplay device 30.

The line width of each of the first auxiliary patterns 66A (the firstauxiliary wires 80A) and the second auxiliary patterns 66B (the secondauxiliary wires 80B) is 30 μm or less, and may be equal to or differentfrom those of the first conductive patterns 64A and the secondconductive patterns 64B. It is preferred that the first conductivepatterns 64A, the second conductive patterns 64B, the first auxiliarypatterns 66A, and the second auxiliary patterns 66B have the same linewidth.

For example, as shown in FIG. 15, when the first conductive film 10A isstacked on the second conductive film 10B to form the conductive filmstack 54, the first conductive patterns 64A and the second conductivepatterns 64B are crossed. Specifically, the first connections 72A of thefirst conductive patterns 64A and the second connections 72B of thesecond conductive patterns 64B are arranged facing each other with thefirst transparent substrate 12A (see FIG. 8A) interposed therebetween,and also the first insulations 78A of the first conductive part 14A andthe second insulations 78B of the second conductive part 14B arearranged facing each other with the first transparent substrate 12Ainterposed therebetween.

As shown in FIG. 15, when the conductive film stack 54 is observed fromabove, the spaces between the first large lattices 68A of the firstconductive film 10A are filled with the second large lattices 68B of thesecond conductive film 10B. In this case, the first auxiliary patterns66A and the second auxiliary patterns 66B overlap with each other toform combined patterns 90 between the first large lattices 68A and thesecond large lattices 68B. As shown in FIG. 16, in the combined pattern90, a first axis 92A of the first auxiliary wire 80A corresponds to asecond axis 92B of the second auxiliary wire 80B, the first auxiliarywire 80A does not overlap with the second auxiliary wire 80B, and an endof the first auxiliary wire 80A corresponds to an end of the secondauxiliary wire 80B, whereby one side of the small lattice 70 (the meshshape) is formed. Therefore, the combined pattern 90 contains acombination of two or more small lattices 70 (mesh shapes).Consequently, as shown in FIG. 15, when the conductive film stack 54 isobserved from above, the entire surface is covered with a large numberof the small lattices 70 (the mesh shapes).

When the conductive film stack 54 is disposed on the display panel 58 ofthe display device 30, for example, as shown in FIG. 5, a plurality ofthe thin metal wires 16, which extend in the first oblique direction(the x direction) and are arranged at the thin wire pitch Ps in thesecond oblique direction (the y direction), and a plurality of the thinmetal wires 16, which extend in the second oblique direction and arearranged at the thin wire pitch Ps in the first oblique direction, arecrossed to form the mesh pattern 20. Each thin metal wire 16 forms acertain oblique angle θ with the horizontal arrangement direction (the mdirection) of the pixels 32 in the display device 30. Each thin metalwire 16 in a large number of the small lattices 70 is at an angle of 30°to 60°, preferably 30° to 44°, with respect to the horizontalarrangement direction (the m direction) of the pixels 32 in the displaydevice 30. The thin wire pitch Ps of the conductive film stack 54 isapproximately equal or close to the diagonal length La1 of one pixel 32(or the diagonal length La2 of two adjacent pixels 32 arranged in thevertical direction) in the display device 30, and the arrangementdirection of the thin metal wires 16 in the conductive film stack 54 isapproximately equal or close to the direction of the diagonal line ofone pixel 32 (or the diagonal line of two adjacent pixels 32 arranged inthe vertical direction) in the display device 30. Consequently, thearrangement period difference between the pixels 32 and the thin metalwires 16 can be reduced to prevent the moire generation. Furthermore,even in a case where the aspect ratio of the first large lattice 68A isgreatly different from the aspect ratio of the second large lattice 68Bin the conductive film stack 54, the moire generation can be effectivelyprevented. Thus, the conductive film stack 54 can be obtained with animproved yield.

When the conductive film stack 54 is used in the touch panel, theprotective layer 56 is formed on the first conductive film 10A, and thefirst terminal wiring patterns 86 a extending from the first conductivepatterns 64A in the first conductive film 10A and the second terminalwiring patterns 86 b extending from the second conductive patterns 64Bin the second conductive film 10B are connected to a scan controlcircuit or the like.

A self or mutual capacitance technology can be preferably used fordetecting a touch position. In the self capacitance technology, avoltage signal for the touch position detection is sequentially suppliedto the first conductive patterns 64A, and further a voltage signal forthe touch position detection is sequentially supplied to the secondconductive patterns 64B. When a finger comes into contact with or closeto the upper surface of the protective layer 56, the capacitance betweenthe first conductive pattern 64A and the second conductive pattern 64Bin the touch position and the GND (ground) is increased, whereby signalsfrom this first conductive pattern 64A and this second conductivepattern 64B have waveforms different from those of signals from theother conductive patterns. Thus, the touch position is calculated by acontrol circuit based on the signals transmitted from the firstconductive pattern 64A and the second conductive pattern 64B. On theother hand, in the mutual capacitance technology, for example, a voltagesignal for the touch position detection is sequentially supplied to thefirst conductive patterns 64A, and the second conductive patterns 64Bare sequentially subjected to sensing (transmitted signal detection).When a finger comes into contact with or close to the upper surface ofthe protective layer 56, the parallel stray capacitance of the finger isadded to the parasitic capacitance between the first conductive pattern64A and the second conductive pattern 64B in the touch position, wherebya signal from this second conductive pattern 64B has a waveformdifferent from those of signals from the other second conductivepatterns 64B. Thus, the touch position is calculated by a controlcircuit based on the order of the first conductive pattern 64A suppliedwith the voltage signal and the signal transmitted from the secondconductive pattern 64B. Even when two fingers come into contact with orclose to the upper surface of the protective layer 56 simultaneously,the touch positions can be detected by using the self or mutualcapacitance technology. Conventional related detection circuits used inprojected capacitive technologies are described in U.S. Pat. Nos.4,582,955, 4,686,332, 4,733,222, 5,374,787, 5,543,588, and 7,030,860, USPatent Application Publication No. 2004/0155871, etc.

A second embodiment will be described below with reference to FIGS. 17to 21. As shown in FIG. 17, a conductive film stack 104 according to thesecond embodiment is prepared by laminating a first conductive film 110Aand a second conductive film 110B in the same manner as the conductivefilm stack 54 according to the first embodiment. The conductive filmstack 104 can be used e.g. in the sensor body 52 of the touch panel 50on the display device 30 shown in FIG. 6. The conductive films 110 (thefirst conductive film 110A and the second conductive film 110B) can beused as the electromagnetic-shielding film of the display device 30shown in FIG. 3, the conductive touch panel film, or the like.

As shown in FIGS. 17, 18A, and 19, the first conductive film 110A has afirst transparent substrate 112A (see FIG. 18A) and a first conductivepart 114A formed on one main surface of the first transparent substrate112A. The first conductive part 114A contains two or more firstconductive patterns 116A (mesh patterns) and first auxiliary patterns120A. The first conductive patterns 116A extend in the horizontaldirection (the m direction), are arranged in the vertical direction (then direction) perpendicular to the horizontal direction, each contain alarge number of lattices, and are composed of the thin metal wires 16.The first auxiliary patterns 120A are arranged around the firstconductive patterns 116A and are composed of the thin metal wires 16.For example, the horizontal direction (the m direction) corresponds tothe horizontal or vertical direction of the projected capacitive touchpanel 50 or the display panel 58 equipped therewith. Also in thisexample, the small lattice 70 is shown as the smallest rhombus in thedrawings, and has a shape equal or similar to the above mesh shape 22 ofthe first embodiment (see FIGS. 1 and 4).

In the second embodiment, as well as in the first embodiment, as shownin FIG. 12, the aspect ratio (Lvs/Lhs) of the small lattice 70 satisfiesthe condition of 0.57<Lvs/Lhs<1.74. In a case where the horizontaldirection is equal to the pixel arrangement direction of the displaydevice 30 (see FIG. 6) having the touch panel 50, the aspect ratio(Lvs/Lhs) of the small lattice 70 satisfies the condition of0.57<Lvs/Lhs<1.00 or 1.00<Lvs/Lhs<1.74, and more preferably satisfiesthe condition of 0.62<Lvs/Lhs<0.81 or 1.23<Lvs/Lhs<1.61. As describedabove, the line width of the small lattice 70 (i.e. the thin metal wire16) may be 30 μm or less. The side length of the small lattice 70 may beselected within a range of 100 to 400 μm.

The first conductive pattern 116A contains two or more first largelattices 118A (first sensing portions). The first large lattices 118Aare connected in series in the horizontal direction (the m direction),and each contain a combination of two or more small lattices 70. Theabove first auxiliary pattern 120A is formed around a side of the firstlarge lattice 118A and is not connected to the first large lattice 118A.

The first large lattice 118A has a substantially rhombic shape, whichhas first staircase patterns 124A containing one or more steps 122 onthe oblique sides. The height of the step 122 is equal to the integralmultiple of the height of the small lattice 70. In the example of FIG.19, on the oblique side of the first large lattice 118A, two steps 122are formed on the third and seventh small lattices 70 in the directionfrom a vertically extending corner toward a horizontally extendingcorner, and the heights of the steps 122 are equal to the height of onesmall lattice 70. The first staircase pattern 124A is such that thecolumns of the small lattices 70 are reduced at the steps 122 in thedirection from a vertically extending corner to a horizontally extendingcorner in the first large lattice 118A.

As described above, the first large lattice 118A has the substantiallyrhombic shape. More specifically, the first large lattice 118A has anabacus bead shape, which is provided by removing several small lattices70 in the horizontally extending corners. Thus, r small lattices 70 (inwhich r is an integer of more than 1) are arranged in the verticaldirection to form a first upper base 126A on each of the twohorizontally extending corners, and one small lattice 70 is positionedto form the vertex angle on each of the vertically extending corners. InFIG. 19, four small lattices 70 are arranged in the vertical directionto form the first upper base 126A on each of the two horizontallyextending corners of the first large lattice 118A.

In this case, when the aspect ratio of the largest rhombus enclosable inthe first large lattice 118A (i.e. the largest rhombus formed betweenthe two first upper bases 126A on the horizontally extending corners) isconsidered as the aspect ratio (Lva/Lha) of the first large lattice 118Afor convenience, the aspect ratio (Lva/Lha) satisfies the condition of0.57<Lva/Lha<1.74.

In a case where the horizontal direction (the m direction) is equal tothe pixel arrangement direction of the display device 30 (see FIG. 6)having the touch panel 50, the aspect ratio (Lva/Lha) of the first largelattice 118A satisfies the condition of 0.57<Lva/Lha<1.00 or1.00<Lva/Lha<1.74, and more preferably satisfies the condition of0.62<Lva/Lha<0.81 or 1.23<Lva/Lha<1.61.

A first absent portion 128A (a portion provided by removing one sidefrom the small lattice 70) is formed between the first upper base 126Aon the horizontally extending corner and the oblique side of the firstlarge lattice 118A extending along the first oblique direction (the xdirection).

As shown in FIG. 19, first connections 132A composed of the thin metalwires 16 are formed between the first large lattices 118A, and eachadjacent two of the first large lattices 118A are electrically connectedby the first connection 132A. The first connection 132A contains firstmedium lattices 134A and 136A. The size of the first medium lattice 134Acorresponds to the total size of n small lattices 70 (in which n is aninteger larger than 1) arranged in the second oblique direction (the ydirection). The size of the first medium lattice 136A corresponds to thetotal size of p×q small lattices 70 (in which p and q are each aninteger larger than 1). Thus, the first medium lattice 136A is such thatp small lattices 70 are arranged in the second oblique direction and qsmall lattices 70 are arranged in the first oblique direction. In theexample of FIG. 19, n is 7, whereby the size of the first medium lattice134A corresponds to the total size of seven small lattices 70 arrangedin the second oblique direction. In the example of FIG. 19, p (thenumber in the second oblique direction) is 3, and q (the number in thefirst oblique direction) is 5, whereby the size of the first mediumlattice 136A corresponds to the total size of fifteen small lattices 70.

The first absent portion 128A (the portion provided by removing one sidefrom the small lattice 70) is formed between the first medium lattice136A and the first large lattice 118A.

First disconnection portions 138A are disposed between the adjacentfirst conductive patterns 116A arranged in the vertical direction, andeach adjacent two of the first large lattices 118A are isolated fromeach other by the first disconnection portion 138A.

The above first auxiliary pattern 120A is formed around the side of thefirst large lattice 118A in the first conductive part 114A, and is notconnected to the first large lattice 118A. The first auxiliary pattern120A contains a plurality of first auxiliary wires 130A (having an axisdirection parallel to the second oblique direction) arranged along thefirst staircase pattern 124A on the oblique side of the first largelattice 118A parallel to the first oblique direction, a plurality offirst auxiliary wires 130A (having an axis direction parallel to thefirst oblique direction) arranged along the first staircase pattern 124Aon the oblique side of the first large lattice 118A parallel to thesecond oblique direction, and a first L-shaped pattern 131A formed bycombining two first auxiliary wires 130A into an L shape.

The axis-direction length of each first auxiliary wire 130A is ½ of theinside side length of the small lattice 70. The first auxiliary wire130A is positioned at a predetermined distance from the first largelattice 118A. The predetermined distance is equal to ½ of the insideside length of the small lattice 70 in this example.

The first L-shaped pattern 131A is formed in the vicinity of the step122 of the first staircase pattern 124A by combining the first auxiliarywire 130A having the axis direction parallel to the first obliquedirection and the first auxiliary wire 130A having the axis directionparallel to the second oblique direction. The first L-shaped pattern131A faces a corner of the step 122 or positioned in the firstdisconnection portion 138A between the first large lattices 118A. Asshown in FIG. 19, in the first disconnection portion 138A, two firstauxiliary wires 130A are disposed in the vicinity of a verticallyextending corner of one first large lattice 118A, and two firstauxiliary wires 130A are disposed in the vicinity of a verticallyextending corner of the adjacent first large lattice 118A, whereby twofirst L-shaped patterns 131A are arranged facing each other in thehorizontal direction.

The side length of each small lattice 70 in the first large lattices118A is preferably 50 μm or more, more preferably 100 to 400 μm, furtherpreferably 150 to 300 μm, most preferably 210 to 250 μm. When the sidelength of the small lattice 70 is within this range, the firstconductive film 110A has high transparency and thereby can be suitablyused at the front of a display device with excellent visibility.

As shown in FIG. 17, in the first conductive film 110A having the abovestructure, in one end of each first conductive pattern 116A, the firstconnection 132A is not formed on the open end of the first large lattice118A. In the other end of the first conductive pattern 116A, the end ofthe first large lattice 118A is connected to the first terminal wiringpattern 86 a composed of the thin metal wire 16 by the first wireconnection 84 a.

On the other hand, as shown in FIGS. 17, 18A, and 20, the secondconductive film 110B has a second conductive part 114B formed on onemain surface of a second transparent substrate 112B (see FIG. 18A). Thesecond conductive part 114B contains two or more second conductivepatterns 116B (mesh patterns) and second auxiliary patterns 120B. Thesecond conductive patterns 116B extend in the vertical direction (the ndirection), are arranged in the horizontal direction (the m direction),each contain a large number of lattices, and are composed of the thinmetal wires 16. The second auxiliary patterns 120B are arranged aroundthe second conductive patterns 116B and are composed of the thin metalwires 16.

The second conductive pattern 116B contains two or more second largelattices 118B (second sensing portions). The second large lattices 118Bare connected in series in the vertical direction (the n direction), andeach contain a combination of two or more small lattices 70. The abovesecond auxiliary pattern 120B is formed around a side of the secondlarge lattice 118B and is not connected to the second large lattice118B.

The second large lattice 118B has a substantially rhombic shape, whichhas second staircase patterns 124B containing one or more steps 122 onthe oblique sides. The height of the step 122 is equal to the integralmultiple of the height of the small lattice 70. In the example of FIG.20, on the oblique side of the second large lattice 118B, two steps 122are formed at a distance of four small lattices 70, and the heights ofthe steps 122 are equal to the height of one small lattice 70. Thesecond staircase pattern 124B is such that the columns of the smalllattices 70 are increased at the steps 122 in the direction from ahorizontally extending corner to a vertically extending corner in thesecond large lattice 118B.

As described above, the second large lattice 118B has the substantiallyrhombic shape. More specifically, the second large lattice 118B has anabacus bead shape, which is provided by removing several small lattices70 in the vertically extending corners. Thus, r small lattices 70 (inwhich r is an integer of more than 1) are arranged in the horizontaldirection to form a second upper base 126B on each of the two verticallyextending corners, and one small lattice 70 is positioned to form thevertex angle on each of the horizontally extending corners. In FIG. 20,four small lattices 70 are arranged in the horizontal direction to formthe second upper base 126B on each of the two vertically extendingcorners of the second large lattice 118B.

In this case, when the aspect ratio of the largest rhombus enclosable inthe second large lattice 118B (i.e. the largest rhombus formed betweenthe two horizontally extending corners) is considered as the aspectratio (Lva/Lha) of the second large lattice 118B for convenience, theaspect ratio (Lva/Lha) satisfies the condition of 0.57<Lva/Lha<1.74.

In a case where the horizontal direction (the m direction) is equal tothe pixel arrangement direction of the display device 30 (see FIG. 6)having the touch panel 50, the aspect ratio (Lva/Lha) of the secondlarge lattice 118B satisfies the condition of 0.57<Lva/Lha<1.00 or1.00<Lva/Lha<1.74, and more preferably satisfies the condition of0.62<Lva/Lha<0.81 or 1.23<Lva/Lha<1.61.

A second absent portion 128B (a portion provided by removing one sidefrom the small lattice 70) is formed between the second upper base 126Bon the vertically extending corner and the oblique side of the secondlarge lattice 118B extending along the second oblique direction.

As shown in FIG. 20, second connections 132B composed of the thin metalwires 16 are formed between the second large lattices 118B, and eachadjacent two of the second large lattices 118B arranged in the verticaldirection are connected by the second connection 132B. The secondconnection 132B contains second medium lattices 134B and 136B. The sizeof the second medium lattice 134B corresponds to the total size of nsmall lattices 70 (in which n is an integer larger than 1) arranged inthe first oblique direction. The size of the second medium lattice 136Bcorresponds to the total size of p×q small lattices 70 (in which p and qare each an integer larger than 1). Thus, the second medium lattice 136Bis formed such that p small lattices 70 are arranged in the firstoblique direction and q small lattices 70 are arranged in the secondoblique direction. In the example of FIG. 20, n is 7, whereby the sizeof the second medium lattice 134B corresponds to the total size of sevensmall lattices 70 arranged in the first oblique direction. In theexample of FIG. 20, p (the number in the first oblique direction) is 3,and q (the number in the second oblique direction) is 5, whereby thesize of the second medium lattice 136B corresponds to the total size offifteen small lattices 70.

The second absent portion 128B (the portion provided by removing oneside from the small lattice 70) is formed between the second mediumlattice 136B and the second large lattice 118B.

Second disconnection portions 138B are disposed between the adjacentsecond conductive patterns 116B arranged in the horizontal direction,and each adjacent two of the second large lattices 118B are isolatedfrom each other by the second disconnection portion 138B.

The above-mentioned second auxiliary pattern 120B is formed around theside of the second large lattice 118B in the second conductive part114B, and is not connected to the second large lattice 118B. The secondauxiliary pattern 120B contains a plurality of second auxiliary wires130B (having an axis direction parallel to the first oblique direction)arranged along the second staircase pattern 124B on the oblique side ofthe second large lattice 118B parallel to the second oblique direction,a plurality of second auxiliary wires 130B (having an axis directionparallel to the second oblique direction) arranged along the secondstaircase pattern 124B on the oblique side of the second large lattice118B parallel to the first oblique direction, and a second L-shapedpattern 131B formed by combining two second auxiliary wires 130B into anL shape.

The axis-direction length of each second auxiliary wire 130B is ½ of theinside side length of the small lattice 70, in the same manner as thefirst auxiliary wire 130A. The second auxiliary wire 130B is positionedat a predetermined distance from the second large lattice 118B. Also thepredetermined distance is equal to ½ of the inside side length of thesmall lattice 70 in the same manner as the first auxiliary wire 130Adescribed above.

The second L-shaped pattern 131B is formed in the vicinity of the step122 of the second staircase pattern 124B by combining the secondauxiliary wire 130B having the axis direction parallel to the firstoblique direction and the second auxiliary wire 130B having the axisdirection parallel to the second oblique direction. The second L-shapedpattern 131B faces a corner of the step 122 or positioned in the seconddisconnection portion 138B between the second large lattices 118B. Asshown in FIG. 20, in the second disconnection portion 138B, two secondauxiliary wires 130B are disposed in the vicinity of a horizontallyextending corner of one second large lattice 118B, and two secondauxiliary wires 130B are disposed in the vicinity of a horizontallyextending corner of the adjacent second large lattice 118B, whereby twosecond L-shaped patterns 131B are arranged facing each other in thevertical direction.

The side length of each small lattice 70 in the second large lattices118B is preferably 50 μm or more, more preferably 100 to 400 μm, furtherpreferably 150 to 300 μm, most preferably 210 to 250 μm. When the sidelength of the small lattice 70 is within this range, the secondconductive film 110B has high transparency and thereby can be suitablyused at the front of a display device with excellent visibility.

As shown in FIG. 17, in the second conductive film 110B having the abovestructure, for example, in one end of each alternate odd-numbered secondconductive pattern 116B and in the other end of each even-numberedsecond conductive pattern 116B, the second connection 132B is not formedon the open end of the second large lattice 118B. In the other end ofeach odd-numbered second conductive pattern 116B and in one end of eacheven-numbered second conductive pattern 116B, the end of the secondlarge lattice 118B is connected to the second terminal wiring pattern 86b composed of the thin metal wires 16 by the second wire connection 84b. Consequently, the second conductive film 110B is used in the touchpanel 50 in the same manner as the first embodiment.

The lower limit of the line width of each of the first conductivepatterns 116A (the first large lattices 118A and the first connections132A) and the second conductive patterns 116B (the second large lattices118B and the second connections 132B) is preferably 1 μm or more, 3 μmor more, 4 μm or more, or 5 μm or more, and the upper limit ispreferably 15 μm or less, 10 μm or less, 9 μm or less, or 8 μm or less.When the line width is less than the lower limit, the conductive filmhas an insufficient conductivity, whereby a touch panel using the filmhas an insufficient detection sensitivity. On the other hand, when theline width is more than the upper limit, moire is significantlygenerated due to the thin metal wire 16, and a touch panel using thefilm has a poor visibility. When the line width is within the aboverange, the moire of the conductive patterns composed of the thin metalwires 16 is improved, and the visibility is remarkably improved. It ispreferred that at least the first transparent substrate 112A has athickness of 75 to 350 μm. The thickness is further preferably 80 to 250μm, particularly preferably 100 to 200 μm.

The lower limit of the line width of each of the first auxiliarypatterns 120A (the first auxiliary wires 130A) and the second auxiliarypatterns 120B (the second auxiliary wires 130B) is preferably 1 μm ormore, 3 μm or more, 4 μm or more, or 5 μm or more, and the upper limitis preferably 15 μm or less, 10 μm or less, 9 μm or less, or 8 μm orless. This line width may be equal to or different from that of thefirst conductive pattern 116A or the second conductive pattern 116B.Incidentally, it is preferred that the first conductive pattern 116A,the second conductive pattern 116B, the first auxiliary pattern 120A,and the second auxiliary pattern 120B have the same line width.

For example, as shown in FIG. 21, when the first conductive film 110A isstacked on the second conductive film 110B to form the conductive filmstack 104, the first conductive patterns 116A and the second conductivepatterns 116B are crossed. Specifically, the first connections 132A ofthe first conductive patterns 116A and the second connections 132B ofthe second conductive patterns 116B are arranged facing each other withthe first transparent substrate 112A (see FIG. 18A) interposedtherebetween, and also the first disconnection portions 138A of thefirst conductive part 114A and the second disconnection portions 138B ofthe second conductive part 114B are arranged facing each other with thefirst transparent substrate 112A interposed therebetween.

As shown in FIG. 21, when the conductive film stack 104 is observed fromabove, the spaces between the first large lattices 118A of the firstconductive film 110A are filled with the second large lattices 118B ofthe second conductive film 110B.

In this case, the first connections 132A and the second connections 132Boverlap with each other. Thus, the first medium lattices 134A and thesecond medium lattices 134B overlap with each other, and the firstmedium lattices 136A and the second medium lattices 136B overlap witheach other, to form combined patterns 140 having a substantiallyrectangular shape. In the combined pattern 140, the first medium lattice134A and the second medium lattice 134B are located on a diagonal line.In the combined pattern 140 formed by the first connection 132A and thesecond connection 132B shown in FIGS. 19 and 20, seven small lattices 70are arranged on a diagonal line, and four small lattices 70 are arrangedon each of the four sides. Thus, the combined pattern 140 contains total25 small lattices 70. On a corner of the combined pattern 140, theremoved one side in the second absent portion 128B of the second largelattice 118B is compensated by one side of the small lattice 70 in thefirst medium lattice 134A, and the removed one side in the first absentportion 128A of the first large lattice 118A is compensated by one sideof the small lattice 70 in the second medium lattice 134B.

Furthermore, the first auxiliary patterns 120A and the second auxiliarypatterns 120B overlap with each other to form combined patterns 142between the first large lattices 118A and the second large lattices118B. In the same manner as the example of the first embodiment shown inFIG. 16, in the combined pattern 142, a first axis of the firstauxiliary wire 130A corresponds to a second axis of the second auxiliarywire 130B, the first auxiliary wire 130A does not overlap with thesecond auxiliary wire 130B, and an end of the first auxiliary wire 130Acorresponds to an end of the second auxiliary wire 130B, whereby oneside of the small lattice 70 (the mesh shape) is formed.

Therefore, the combined patterns 140 and 142 each contain a combinationof two or more small lattices 70 (mesh shapes). Consequently, as shownin FIG. 21, when the conductive film stack 104 is observed from above,the entire surface is covered with a large number of the small lattices70 (the mesh shapes). A reference position of the second embodiment issuch a position that one side of the small lattice 70 is formed by thefirst auxiliary wire 130A and the second auxiliary wire 130B.

In this embodiment, the first and second staircase patterns 124A and124B having the steps 122 are arranged in the above manner, whereby theboundaries between the first large lattices 118A and the second largelattices 118B are made further less visible to improve the visibility.

When the conductive film stack 104 is used in the touch panel, theprotective layer 56 is formed on the first conductive film 110A, and thefirst terminal wiring patterns 86 a extending from the first conductivepatterns 116A in the first conductive film 110A and the second terminalwiring patterns 86 b extending from the second conductive patterns 116Bin the second conductive film 110B are connected to a scan controlcircuit or the like.

The above conductive film stacks 54 and 104 of the first and secondembodiments have the structures shown in FIGS. 7, 8A, 17, and 18A. Forexample, in the first embodiment, the first conductive part 14A isformed on the one main surface of the first transparent substrate 12A,and the second conductive part 14B is formed on the one main surface ofthe second transparent substrate 12B. Alternatively, as shown in FIGS.8B and 18B, for example in the first embodiment, the first conductivepart 14A may be formed on the one main surface of the first transparentsubstrate 12A, and the second conductive part 14B may be formed on theother main surface of the first transparent substrate 12A. In this case,the second transparent substrate 12B is not used, the first transparentsubstrate 12A is stacked on the second conductive part 14B, and thefirst conductive part 14A is stacked on the first transparent substrate12A. In addition, another layer may be disposed between the firstconductive film 10A and the second conductive film 10B. The firstconductive patterns 64A and the second conductive patterns 64B may bearranged facing each other as long as they are insulated.

As shown in FIG. 6, first alignment marks 94 a and second alignmentmarks 94 b are preferably formed, for example, on the corners of thefirst conductive film 10A and the second conductive film 10B. The firstalignment marks 94 a and the second alignment marks 94 b are used forpositioning the first conductive film 10A and the second conductive film10B in the process of bonding the films. When the first conductive film10A and the second conductive film 10B are bonded to obtain theconductive film stack 54, the first alignment marks 94 a and the secondalignment marks 94 b form composite alignment marks. The compositealignment marks may be used for positioning the conductive film stack 54in the process of attaching it to the display panel 58.

Though the first conductive films 10A and 110A and the second conductivefilms 10B and 110B are used in the projected capacitive touch panel 50in the above embodiments, they can be used in a surface capacitive touchpanel or a resistive touch panel.

Though the conductive films 10 and 110 are used as theelectromagnetic-shielding film or the conductive touch panel film in theabove embodiments, they can be used also as another optical film for thedisplay panel 58 of the display device 30. In this case, the wholesurface of the display panel 58 may be covered with the mesh pattern ofthe conductive film. The whole surface of the display panel 58 may becovered with the mesh pattern 20 of the conductive film 10 or 110, andonly a part (such as a corner or a center portion) of the display screen58 a may be covered with the mesh pattern 20 of the conductive film 10or 110.

A method for producing the conductive film 10 or 110 according to thefirst embodiment will be described below. It is to be understood thatthis method can be used also in the second embodiment.

The conductive film 10 may be produced as follows. For example, aphotosensitive material having the transparent substrate 12 and thereona photosensitive silver halide-containing emulsion layer may be exposedand developed, whereby metallic silver portions and light-transmittingportions may be formed in the exposed areas and the unexposed areasrespectively to obtain the mesh pattern 20. The metallic silver portionsmay be subjected to a physical development treatment and/or a platingtreatment to deposit a conductive metal thereon.

Alternatively, a photosensitive plating base layer of a pre-platingtreatment material may be formed on the first transparent substrate 12Aand the second transparent substrate 12B. The resultant may be exposedand developed, and may be subjected to a plating treatment, wherebymetal portions and light-transmitting portions may be formed in theexposed areas and the unexposed areas respectively to form the firstconductive patterns 64A and the second conductive patterns 64B. Themetal portions may be further subjected to a physical developmenttreatment and/or a plating treatment to deposit a conductive metalthereon.

The following two processes can be preferably used in the method usingthe pre-plating treatment material. The processes are disclosed morespecifically in Japanese Laid-Open Patent Publication Nos. 2003-213437,2006-064923, 2006-058797, and 2006-135271, etc.

(a) A process comprising applying, to a transparent substrate, a platingbase layer having a functional group interactable with a platingcatalyst or a precursor thereof, exposing and developing the layer, andsubjecting the developed layer to a plating treatment to form a metalportion on the plating base material.

(b) A process comprising applying, to a transparent substrate, anunderlayer containing a polymer and a metal oxide and a plating baselayer having a functional group interactable with a plating catalyst ora precursor thereof in this order, exposing and developing the layers,and subjecting the developed layers to a plating treatment to form ametal portion on the plating base material.

Alternatively, a photoresist film on a copper foil disposed on thetransparent substrate 12 may be exposed and developed to form a resistpattern, and the copper foil exposed from the resist pattern may beetched to form the mesh pattern 20.

A paste containing fine metal particles may be printed on thetransparent substrate 12, and the printed paste may be plated with ametal to form the mesh pattern 20.

The mesh pattern 20 may be printed on the transparent substrate 12 byusing a screen or gravure printing plate.

The mesh pattern 20 may be formed on the transparent substrate 12 byusing an inkjet method.

A particularly preferred method, which contains using a photographicphotosensitive silver halide material for producing the conductive film10 according to this embodiment, will be mainly described below.

The method for producing the conductive film 10 of this embodimentincludes the following three processes different in the photosensitivematerials and development treatments.

(1) A process comprising subjecting a photosensitive black-and-whitesilver halide material free of physical development nuclei to a chemicalor thermal development to form the metallic silver portions on thephotosensitive material.

(2) A process comprising subjecting a photosensitive black-and-whitesilver halide material having a silver halide emulsion layer containingphysical development nuclei to a solution physical development to formthe metallic silver portions on the photosensitive material.

(3) A process comprising subjecting a stack of a photosensitiveblack-and-white silver halide material free of physical developmentnuclei and an image-receiving sheet having a non-photosensitive layercontaining physical development nuclei to a diffusion transferdevelopment to form the metallic silver portions on thenon-photosensitive image-receiving sheet.

In the process of (1), an integral black-and-white development procedureis used to form a transmittable conductive film such as alight-transmitting conductive film on the photosensitive material. Theresulting silver is a chemically or thermally developed silvercontaining a filament having a high-specific surface area, and therebyshows a high activity in the following plating or physical developmenttreatment.

In the process of (2), the silver halide particles are melted around anddeposited on the physical development nuclei in the exposed areas toform a transmittable conductive film such as a light-transmittingconductive film on the photosensitive material. Also in this process, anintegral black-and-white development procedure is used. Though highactivity can be achieved since the silver halide is deposited on thephysical development nuclei in the development, the developed silver hasa spherical shape with small specific surface.

In the process of (3), the silver halide particles are melted in theunexposed areas, and are diffused and deposited on the developmentnuclei of the image-receiving sheet, to form a transmittable conductivefilm such as a light-transmitting conductive film on the sheet. In thisprocess, a so-called separate-type procedure is used, theimage-receiving sheet being peeled off from the photosensitive material.

A negative or reversal development treatment can be used in theprocesses. In the diffusion transfer development, the negativedevelopment treatment can be carried out using an auto-positivephotosensitive material.

The chemical development, thermal development, solution physicaldevelopment, and diffusion transfer development have the meaningsgenerally known in the art, and are explained in common photographicchemistry texts such as Shin-ichi Kikuchi, “Shashin Kagaku (PhotographicChemistry)”, Kyoritsu Shuppan Co., Ltd., 1955 and C. E. K. Mees, “TheTheory of Photographic Processes, 4th ed.”, Mcmillan, 1977. A liquidtreatment is generally used in the present invention, and also a thermaldevelopment treatment can be utilized. For example, techniques describedin Japanese Laid-Open Patent Publication Nos. 2004-184693, 2004-334077,and 2005-010752 and Japanese Patent Application Nos. 2004-244080 and2004-085655 can be used in the present invention.

The structure of each layer in the conductive film 10 of this embodimentwill be described in detail below.

[Transparent Substrate 12]

The transparent substrate 12 may be a plastic film, a plastic plate, aglass plate, etc.

Examples of materials for the plastic film and the plastic plate includepolyesters such as polyethylene terephthalates (PET) and polyethylenenaphthalates (PEN), and triacetyl celluloses (TAC).

The transparent substrate 12 is preferably a film or plate of a plastichaving a melting point of about 290° C. or lower. The PET isparticularly preferred from the viewpoints of light transmittance,workability, etc.

[Silver Salt Emulsion Layer]

The silver salt emulsion layer to be converted to the thin metal wire 16of the conductive film 10 contains a silver salt and a binder, and mayfurther contain a solvent and an additive such as a dye.

The silver salt used in this embodiment may be an inorganic silver saltsuch as a silver halide or an organic silver salt such as silveracetate. In this embodiment, the silver halide is preferred because ofits excellent light sensing property.

The applied silver amount (the amount of the applied silver salt in thesilver density) of the silver salt emulsion layer is preferably 1 to 30g/m², more preferably 1 to 25 g/m², further preferably 5 to 20 g/m².When the applied silver amount is within this range, the resultantconductive film 10 can exhibit a desired surface resistance.

Examples of the binders used in this embodiment include gelatins,polyvinyl alcohols (PVA), polyvinyl pyrolidones (PVP), polysaccharidessuch as starches, celluloses and derivatives thereof, polyethyleneoxides, polyvinylamines, chitosans, polylysines, polyacrylic acids,polyalginic acids, polyhyaluronic acids, and carboxycelluloses. Thebinders show a neutral, anionic, or cationic property depending on theionicity of a functional group.

In this embodiment, the amount of the binder in the silver salt emulsionlayer is not particularly limited, and may be appropriately selected toobtain sufficient dispersion and adhesion properties. The volume ratioof silver/binder in the silver salt emulsion layer is preferably ¼ ormore, more preferably ½ or more. The silver/binder volume ratio ispreferably 100/1 or less, more preferably 50/1 or less. Particularly,the silver/binder volume ratio is further preferably 1/1 to 4/1, mostpreferably 1/1 to 3/1. When the silver/binder volume ratio of the silversalt emulsion layer is within the range, the resistance variation can bereduced even under various applied silver amount, whereby the conductivefilm 10 can be produced with a uniform surface resistance. Thesilver/binder volume ratio can be obtained by converting the silverhalide/binder weight ratio of the material to the silver/binder weightratio, and by further converting the silver/binder weight ratio to thesilver/binder volume ratio.

<Solvent>

The solvent used for forming the silver salt emulsion layer is notparticularly limited, and examples thereof include water, organicsolvents (e.g. alcohols such as methanol, ketones such as acetone,amides such as formamide, sulfoxides such as dimethyl sulfoxide, esterssuch as ethyl acetate, ethers), ionic liquids, and mixtures thereof.

<Other Additives>

The additives used in this embodiment are not particularly limited, andmay be preferably selected from known additives.

[Other Layers]

A protective layer (not shown) may be formed on the silver salt emulsionlayer. In addition, an undercoat layer or the like may be formed belowthe silver salt emulsion layer.

The steps for producing the conductive film 10 will be described below.

[Exposure]

In this embodiment, the conductive part 14 may be formed in a printingprocess, and may be formed by exposure and development treatments, etc.in another process. Thus, a photosensitive material having thetransparent substrate 12 and thereon the silver salt-containing layer ora photosensitive material coated with a photopolymer forphotolithography is subjected to the exposure treatment. Anelectromagnetic wave may be used in the exposure. For example, theelectromagnetic wave may be a light such as a visible light or anultraviolet light, or a radiation such as an X-ray. The exposure may becarried out using a light source having a wavelength distribution or aspecific wavelength.

[Development Treatment]

In this embodiment, the emulsion layer is subjected to the developmenttreatment after the exposure. Common development treatment technologiesfor photographic silver salt films, photographic papers, print engravingfilms, emulsion masks for photomasking, and the like may be used in thepresent invention.

In the present invention, the development process may include a fixationtreatment for removing the silver salt in the unexposed areas tostabilize the material. Fixation treatment technologies for photographicsilver salt films, photographic papers, print engraving films, emulsionmasks for photomasking, and the like may be used in the presentinvention.

The developed and fixed photosensitive material is preferably subjectedto a water washing treatment or a stabilization treatment.

The ratio of the metallic silver contained in the exposed areas afterthe development to the silver contained in the areas before the exposureis preferably 50% or more, more preferably 80% or more, by mass. Whenthe ratio is 50% or more by mass, a high conductivity can be achieved.

The conductive film 10 is obtained by the above steps. The surfaceresistance of the resultant conductive film 10 is preferably within therange of 0.1 to 300 ohm/sq. Preferred surface resistance ranges of theconductive film 10 depend on the use of the conductive film 10. In thecase of using the conductive film 10 in the electromagnetic-shieldingfilm, the surface resistance is preferably 10 ohm/sq or less, morepreferably 0.1 to 3 ohm/sq. In the case of using the conductive film 10in the touch panel, the surface resistance is preferably 1 to 70 ohm/sq,more preferably 5 to 50 ohm/sq, further preferably 5 to 30 ohm/sq. Theconductive film 10 may be subjected to a calender treatment after thedevelopment treatment to obtain a desired surface resistance.

[Physical Development Treatment and Plating Treatment]

In this embodiment, to increase the conductivity of the metallic silverportion formed by the above exposure and development treatments,conductive metal particles may be deposited on the metallic silverportion by a physical development treatment and/or a plating treatment.In the present invention, the conductive metal particles may bedeposited on the metallic silver portion by only one of the physicaldevelopment and plating treatments or by the combination of thetreatments. The metallic silver portion, subjected to the physicaldevelopment treatment and/or the plating treatment in this manner, isalso referred to as the conductive metal portion.

In this embodiment, the physical development is such a process thatmetal ions such as silver ions are reduced by a reducing agent, wherebymetal particles are deposited on a metal or metal compound core. Suchphysical development has been used in the fields of instant B & W film,instant slide film, printing plate production, etc., and thetechnologies can be used in the present invention. The physicaldevelopment may be carried out at the same time as the above developmenttreatment after the exposure, and may be carried out after thedevelopment treatment separately.

In this embodiment, the plating treatment may contain electrolessplating (such as chemical reduction plating or displacement plating),electrolytic plating, or a combination thereof. Known electrolessplating technologies for printed circuit boards, etc. may be used inthis embodiment. The electroless plating is preferably electrolesscopper plating.

[Oxidation Treatment]

In this embodiment, the metallic silver portion formed by thedevelopment treatment or the conductive metal portion formed by thephysical development treatment and/or the plating treatment ispreferably subjected to an oxidation treatment. For example, by theoxidation treatment, a small amount of a metal deposited on thelight-transmitting portion can be removed, so that the transmittance ofthe light-transmitting portion can be increased to approximately 100%.

[Conductive Metal Portion]

In this embodiment, the line width of the conductive metal portion (thethin metal wire 16) may be 30 μm or less. The lower limit of the linewidth is preferably 0.1 μm or more, 1 μm or more, 3 μm or more, 4 μm ormore, or 5 μm or more, and the upper limit thereof is preferably 30 μmor less, 15 μm or less, 10 μm or less, 9 μm or less, or 8 μm or less.When the line width is less than the lower limit, the conductive metalportion has an insufficient conductivity, whereby the touch panel 50using the conductive metal portion has an insufficient detectionsensitivity. On the other hand, when the line width is more than theupper limit, moire is significantly generated due to the conductivemetal portion, and the touch panel 50 using the conductive metal portionhas a poor visibility. When the line width is within the above range,the moire of the conductive metal portion is improved, and thevisibility is remarkably improved. The side length of the small lattice70 is preferably 100 to 400 μm, further preferably 150 to 300 μm, mostpreferably 210 to 250 μm. The conductive metal portion may have a partwith a line width of more than 200 μm for the purpose of groundconnection, etc.

In this embodiment, the opening ratio of the conductive metal portion ispreferably 85% or more, more preferably 90% or more, most preferably 95%or more, in view of the visible light transmittance. The opening ratiois the ratio of the light-transmitting portions other than the thinmetal wires 16 to the entire conductive part. For example, a rhombicshape having a line width of 6 μm and a side length of 240 μm has anopening ratio of 95%.

[Light-Transmitting Portion]

In this embodiment, the light-transmitting portion is a portion havinglight transmittance, other than the conductive metal portions in theconductive film 10. The transmittance of the light-transmitting portion,which is herein a minimum transmittance value in a wavelength region of380 to 780 nm obtained neglecting the light absorption and reflection ofthe transparent substrate 12, is 90% or more, preferably 95% or more,more preferably 97% or more, further preferably 98% or more, mostpreferably 99% or more.

The exposure is preferably carried out using a glass mask method or alaser lithography pattern exposure method.

[Conductive Film 10]

In the conductive film 10 of this embodiment, the thickness of thetransparent substrate 12 is preferably 5 to 350 μm, more preferably 30to 150 μm. When the thickness is 5 to 350 μm, a desired visible lighttransmittance can be obtained, and the transparent substrate 12 can beeasily handled.

The thickness of the metallic silver portion formed on the transparentsubstrate 12 may be appropriately selected by controlling the thicknessof the coating liquid for the silver salt-containing layer applied tothe transparent substrate 12. The thickness of the metallic silverportion may be selected within a range of 0.001 to 0.2 mm, and ispreferably 30 μm or less, more preferably 20 μm or less, furtherpreferably 0.01 to 9 μm, most preferably 0.05 to 5 μm. The metallicsilver portion is preferably formed in a patterned shape. The metallicsilver portion may have a monolayer structure or a multilayer structurecontaining two or more layers. When the metallic silver portion has apatterned multilayer structure containing two or more layers, the layersmay have different wavelength color sensitivities. In this case,different patterns can be formed in the layers by using exposure lightswith different wavelengths.

In the case of using the conductive metal portion in the touch panel 50,the conductive metal portion preferably has a smaller thickness. As thethickness is reduced, the viewing angle and visibility of the displaypanel 58 are improved. Thus, the thickness of the layer of theconductive metal on the conductive metal portion is preferably less than9 μm, more preferably 0.1 μm or more but less than 5 μm, furtherpreferably 0.1 μm or more but less than 3 μm.

In this embodiment, the thickness of the metallic silver portion can becontrolled by changing the coating thickness of the silversalt-containing layer, and the thickness of the conductive metalparticle layer can be controlled in the physical development treatmentand/or the plating treatment. Therefore, even the conductive film havinga thickness of less than 5 μm (preferably less than 3 μm) can be easilyproduced.

The plating or the like is not necessarily carried out in the method forproducing the conductive film 10 of this embodiment. This is because thedesired surface resistance can be obtained by controlling the appliedsilver amount and the silver/binder volume ratio of the silver saltemulsion layer in the method. The calender treatment or the like may becarried out if necessary.

(Film Hardening Treatment after Development Treatment)

It is preferred that after the silver salt emulsion layer is developed,the resultant is immersed in a hardener and thus subjected to a filmhardening treatment. Examples of the hardeners include boric acid anddialdehydes such as glutaraldehyde, adipaldehyde, and2,3-dihydroxy-1,4-dioxane, described in Japanese Laid-Open PatentPublication No. 02-141279.

An additional functional layer such as an antireflection layer or a hardcoat layer may be formed on the conductive film 10 of this embodiment.

[Calender Treatment]

The developed metallic silver portion may be smoothened by a calendertreatment. The conductivity of the metallic silver portion can besignificantly increased by the calender treatment. The calendertreatment may be carried out using a calender roll unit. The calenderroll unit generally has a pair of rolls.

The roll used in the calender treatment may be composed of a metal or aplastic (such as an epoxy, polyimide, polyamide, or polyimide-amide).Particularly in a case where the photosensitive material has theemulsion layer on both sides, it is preferably treated with a pair ofthe metal rolls. In a case where the photosensitive material has theemulsion layer only on one side, it may be treated with the combinationof the metal roll and the plastic roll in view of wrinkling prevention.The upper limit of the line pressure is preferably 1960 N/cm (200kgf/cm, corresponding to a surface pressure of 699.4 kgf/cm²) or more,more preferably 2940 N/cm (300 kgf/cm, corresponding to a surfacepressure of 935.8 kgf/cm²) or more. The upper limit of the line pressureis 6880 N/cm (700 kgf/cm) or less.

The smoothing treatment such as the calender treatment is preferablycarried out at a temperature of 10° C. (without temperature control) to100° C. Though the preferred treatment temperature range depends on thedensity and shape of the metal mesh or metal wiring pattern, the type ofthe binder, etc., the temperature is more preferably 10° C. (withouttemperature control) to 50° C. in general.

The present invention may be appropriately combined with technologiesdescribed in the following patent publications and international patentpamphlets shown in Tables 1 and 2. “Japanese Laid-Open Patent”,“Publication No.”, “Pamphlet No.”, etc. are omitted therein.

TABLE 1 2004-221564 2004-221565 2007-200922 2006-352073 2007-1292052007-235115 2007-207987 2006-012935 2006-010795 2006-228469 2006-3324592009-21153 2007-226215 2006-261315 2007-072171 2007-102200 2006-2284732006-269795 2006-269795 2006-324203 2006-228478 2006-228836 2007-0093262006-336090 2006-336099 2006-348351 2007-270321 2007-270322 2007-2013782007-335729 2007-134439 2007-149760 2007-208133 2007-178915 2007-3343252007-310091 2007-116137 2007-088219 2007-207883 2007-013130 2005-3025082008-218784 2008-227350 2008-227351 2008-244067 2008-267814 2008-2704052008-277675 2008-277676 2008-282840 2008-283029 2008-288305 2008-2884192008-300720 2008-300721 2009-4213 2009-10001 2009-16526 2009-213342009-26933 2008-147507 2008-159770 2008-159771 2008-171568 2008-1983882008-218096 2008-218264 2008-224916 2008-235224 2008-235467 2008-2419872008-251274 2008-251275 2008-252046 2008-277428

TABLE 2 2006/001461 2006/088059 2006/098333 2006/098336 2006/0983382006/098335 2006/098334 2007/001008

EXAMPLES

The present invention will be described more specifically below withreference to Examples. Materials, amounts, ratios, treatment contents,treatment procedures, and the like, used in Examples, may beappropriately changed without departing from the scope of the presentinvention. The following specific examples are therefore to beconsidered in all respects as illustrative and not restrictive.

First Example

In First Example, conductive films of Comparative Examples 1 to 6 andExamples 1 to 36 were produced respectively. The opening ratio of eachconductive sheet was calculated, and the moire of each conductive sheetwas evaluated. The components, calculation results, and evaluationresults of Comparative Examples 1 to 6 and Examples 1 to 36 are shown inTables 3 and 4.

Examples 1 to 36 and Comparative Examples 1 to 6 (Photosensitive SilverHalide Material)

An emulsion containing an aqueous medium, a gelatin, and silveriodobromochloride particles was prepared. The amount of the gelatin was10.0 g per 150 g of Ag, and the silver iodobromochloride particles hadan I content of 0.2 mol %, a Br content of 40 mol %, and an averagespherical equivalent diameter of 0.1 μm.

K₃Rh₂Br₉ and K₂IrCl₆ were added to the emulsion at a concentration of10⁻⁷ mol/mol-silver to dope the silver bromide particles with Rh and Irions. Na₂PdCl₄ was further added to the emulsion, and the resultantemulsion was subjected to gold-sulfur sensitization using chlorauricacid and sodium thiosulfate. The emulsion and a gelatin hardening agentwere applied to a transparent substrate composed of a polyethyleneterephthalate (PET). The amount of the applied silver was 10 g/m², andthe Ag/gelatin volume ratio was 2/1.

The PET support had a width of 30 cm, and the emulsion was appliedthereto into a width of 25 cm and a length of 20 m. The both endportions having a width of 3 cm were cut off to obtain a rollphotosensitive silver halide material having a width of 24 cm.

(Exposure)

An A4 (210 mm×297 mm) sized area of the transparent substrate wasexposed in the mesh pattern 20 shown in FIG. 1. The exposure was carriedout using a patterned photomask and a parallel light from a light sourceof a high-pressure mercury lamp.

(Development Treatment) Formulation of 1 L of Developer

Hydroquinone 20 g Sodium sulfite 50 g Potassium carbonate 40 gEthylenediaminetetraacetic acid 2 g Potassium bromide 3 g Polyethyleneglycol 2000 1 g Potassium hydroxide 4 g pH Controlled at 10.3

Formulation of 1 L of Fixer

Ammonium thiosulfate solution (75%) 300 ml Ammonium sulfite monohydrate25 g 1,3-Diaminopropanetetraacetic acid 8 g Acetic acid 5 g Aqueousammonia (27%) 1 g pH Controlled at 6.2

The exposed photosensitive material was treated with the above treatmentagents using an automatic processor FG-710PTS manufactured by FUJIFILMCorporation under the following conditions. A development treatment wascarried out at 35° C. for 30 seconds, a fixation treatment was carriedout at 34° C. for 23 seconds, and then a water washing treatment wascarried out for 20 seconds at a water flow rate of 5 L/min.

Example 1

In the conductive film produced in Example 1, the thin metal wires 16had an inclination (an angle θ between the first thin metal wire 16 aand the imaginary line 24 extending in the opening 18 in the horizontaldirection to connect a plurality of intersection points in the meshpattern 20) of 30°, a thin wire pitch Ps of 200 μm, and a line width of6 μm.

Examples 2 to 6

The conductive films of Examples 2, 3, 4, 5, and 6 were produced in thesame manner as Example 1 except that the thin metal wires 16 had thinwire pitches Ps of 220, 240, 260, 300, and 400 μm respectively.

Example 7

In the conductive film produced in Example 7, the thin metal wires 16had an inclination of 36°, a thin wire pitch Ps of 200 μm, and a linewidth of 6 μm.

Examples 8 to 12

The conductive films of Examples 8, 9, 10, 11, and 12 were produced inthe same manner as Example 7 except that the thin metal wires 16 hadthin wire pitches Ps of 220, 240, 260, 300, and 400 μm respectively.

Example 13

In the conductive film produced in Example 13, the thin metal wires 16had an inclination of 37°, a thin wire pitch Ps of 200 μm, and a linewidth of 6 μm.

Examples 14 to 18

The conductive films of Examples 14, 15, 16, 17, and 18 were produced inthe same manner as Example 13 except that the thin metal wires 16 hadthin wire pitches Ps of 220, 240, 260, 300, and 400 μm respectively.

Example 19

In the conductive film produced in Example 19, the thin metal wires 16had an inclination of 39°, a thin wire pitch Ps of 200 μm, and a linewidth of 6 μm.

Examples 20 to 24

The conductive films of Examples 20, 21, 22, 23, and 24 were produced inthe same manner as Example 19 except that the thin metal wires 16 hadthin wire pitches Ps of 220, 240, 260, 300, and 400 μm respectively.

Example 25

In the conductive film produced in Example 25, the thin metal wires 16had an inclination of 40°, a thin wire pitch Ps of 200 μm, and a linewidth of 6 μm.

Examples 26 to 30

The conductive films of Examples 26, 27, 28, 29, and 30 were produced inthe same manner as Example 25 except that the thin metal wires 16 hadthin wire pitches Ps of 220, 240, 260, 300, and 400 μm respectively.

Example 31

In the conductive film produced in Example 31, the thin metal wires 16had an inclination of 44°, a thin wire pitch Ps of 200 μm, and a linewidth of 6 μm.

Examples 32 to 36

The conductive films of Examples 32, 33, 34, 35, and 36 were produced inthe same manner as Example 31 except that the thin metal wires 16 hadthin wire pitches Ps of 220, 240, 260, 300, and 400 μm respectively.

Comparative Example 1

In the conductive film produced in Comparative Example 1, the thin metalwires 16 had an inclination of 29°, a thin wire pitch Ps of 200 μm, anda line width of 6 μm.

Comparative Examples 2 and 3

The conductive films of Comparative Examples 2 and 3 were produced inthe same manner as Comparative Example 1 except that the thin metalwires 16 had thin wire pitches Ps of 300 and 400 μm respectively.

Comparative Example 4

In the conductive film produced in Comparative Example 4, the thin metalwires 16 had an inclination of 45°, a thin wire pitch Ps of 200 μm, anda line width of 6 μm.

Comparative Examples 5 and 6

The conductive films of Comparative Examples 5 and 6 were produced inthe same manner as Comparative Example 4 except that the thin metalwires 16 had thin wire pitches Ps of 300 and 400 μm respectively.

[Evaluation] (Calculation of Opening Ratio)

The transmittances of the conductive films of Comparative Examples 1 to6 and Examples 1 to 36 were measured by a spectrophotometer, and theopening ratios were proportionally calculated to evaluate thetransparencies.

(Moire Evaluation)

Each of the conductive films of Comparative Examples 1 to 6 and Examples1 to 36 was attached to the display panel 58 of the display device 30,the display device 30 was fixed to a turntable, and the display device30 was operated to display a white color. The moire of the conductivefilm was visually observed and evaluated while turning the turntablewithin a bias angle range of −20° to +20°. The display device 30 had ahorizontal pixel pitch Ph and a vertical pixel pitch Pv of about 192 μm.Pavilion Notebook PC dmla (11.6-inch glossy liquid crystal display,WXGA/1366×768) manufactured by Hewlett-Packard Company was used in thisevaluation.

The moire was observed at a distance of 0.5 m from the display screen ofthe display device 30. The conductive film was evaluated as “Excellent”when the moire was not visible, as “Fair” when the moire was slightlyvisible to an acceptable extent, or as “Poor” when the moire was highlyvisible. In the overall evaluation, each conductive film was evaluatedas “A”, “B”, “C”, or “D”. A means that the film was evaluated asExcellent in an angular range of 10° or more, B means that the film wasevaluated as Excellent in an angular range of less than 10°, C meansthat the film was not evaluated as Excellent at any angle and wasevaluated as Poor in an angular range of less than 30°, and D means thatthe film was not evaluated as Excellent at any angle and was evaluatedas Poor in an angular range of 30° or more.

TABLE 3 Thin metal wire Display device Thin wire Line HorizontalVertical pitch Ps width pixel pitch pixel pitch Opening MoireInclination (μm) (μm) Ph (μm) Pv (μm) Ratio (%) evaluation Comparative29° 200 6 192 192 94 D Example 1 Comparative 29° 300 6 192 192 96 DExample 2 Comparative 29° 400 6 192 192 97 D Example 3 Example 1 30° 2006 192 192 94 C Example 2 30° 220 6 192 192 95 B Example 3 30° 240 6 192192 95 B Example 4 30° 260 6 192 192 96 C Example 5 30° 300 6 192 192 96C Example 6 30° 400 6 192 192 97 C Example 7 36° 200 6 192 192 94 CExample 8 36° 220 6 192 192 95 A Example 9 36° 240 6 192 192 95 AExample 10 36° 260 6 192 192 96 B Example 11 36° 300 6 192 192 96 BExample 12 36° 400 6 192 192 97 B Example 13 37° 200 6 192 192 94 BExample 14 37° 220 6 192 192 95 A Example 15 37° 240 6 192 192 95 AExample 16 37° 260 6 192 192 96 B Example 17 37° 300 6 192 192 96 BExample 18 37° 400 6 192 192 97 B

TABLE 4 Thin metal wire Display device Thin wire Line HorizontalVertical pitch Ps width pixel pitch pixel pitch Opening MoireInclination (μm) (μm) Ph (μm) Pv (μm) Ratio (%) evaluation Example 1939° 200 6 192 192 94 B Example 20 39° 220 6 192 192 95 A Example 21 39°240 6 192 192 95 A Example 22 39° 260 6 192 192 96 B Example 23 39° 3006 192 192 96 B Example 24 39° 400 6 192 192 97 B Example 25 40° 200 6192 192 94 C Example 26 40° 220 6 192 192 95 B Example 27 40° 240 6 192192 95 B Example 28 40° 260 6 192 192 96 C Example 29 40° 300 6 192 19296 C Example 30 40° 400 6 192 192 97 C Example 31 44° 200 6 192 192 94 CExample 32 44° 220 6 192 192 95 B Example 33 44° 240 6 192 192 95 BExample 34 44° 260 6 192 192 96 C Example 35 44° 300 6 192 192 96 CExample 36 44° 400 6 192 192 97 C Comparative 45° 200 6 192 192 94 DExample 4 Comparative 45° 300 6 192 192 95 D Example 5 Comparative 45°400 6 192 192 95 D Example 6

As shown in Tables 3 and 4, the conductive films of Comparative Examples1 to 6 were evaluated as D, and had highly visible moire. Of Examples 1to 36, in Examples 1, 4 to 7, 25, 28 to 31, and 34 to 36, the moire wasonly slightly visible to an acceptable extent. In the other Examples,Examples 2, 3, 10 to 13, 16 to 19, 22 to 24, 26, 27, 32, and 33 weredesirable because the moire was hardly generated. In particular, inExamples 8, 9, 14, 15, 20, and 21, the moire generation was not observedbecause the thin metal wires 16 had an inclination of 36° to 39° and athin wire pitch Ps of 220 to 240 μm.

Projected capacitive touch panels 50 were produced using the conductivefilms of Examples 1 to 36 respectively. When the touch panels 50 wereoperated by a finger touch, they exhibited high response speeds andexcellent detection sensitivities. Furthermore, when two or more pointswere touched, the touch panels 50 exhibited the same excellentproperties. Thus, it was confirmed that the touch panels 50 were capableof multi-touch detection.

Second Example

In Second Example, conductive film stacks 54 of Comparative Examples 11to 16 and Examples 41 to 100 were produced respectively. The openingratio of each conductive film stack 54 was calculated, and the moire ofeach conductive film stack 54 was evaluated. The components, calculationresults, and evaluation results of Comparative Examples 11 to 16 andExamples 41 to 100 are shown in Tables 5 and 6.

Examples 41 to 100 and Comparative Examples 11 to 16 (PhotosensitiveSilver Halide Material)

A roll photosensitive silver halide material was prepared in the samemanner as First Example.

(Exposure)

An A4 (210 mm×297 mm) sized area of the first transparent substrate 12Awas exposed in the pattern of the first conductive film 10A shown inFIGS. 7 and 9, and an A4 sized area of the second transparent substrate12B was exposed in the pattern of the second conductive film 10B shownin FIGS. 7 and 13. The exposure was carried out using patternedphotomasks and a parallel light from a light source of a high-pressuremercury lamp.

(Development Treatment)

The exposed photosensitive material was treated with the above treatmentagents of First Example using an automatic processor FG-710PTSmanufactured by FUJIFILM Corporation under the following conditions. Adevelopment treatment was carried out at 35° C. for 30 seconds, afixation treatment was carried out at 34° C. for 23 seconds, and then awater washing treatment was carried out for 20 seconds at a water flowrate of 5 L/min.

Example 41

In the conductive film stack produced in Example 41, the small lattices70 in the first conductive part 14A of the first conductive film 10A andthe second conductive part 14B of the second conductive film 10B had anangle θ of 30° between the first side 70 a (see FIG. 10) and the firstdirection (the x direction), a side length of 200 μm, and a line widthof 6 μm.

Examples 42 to 44

The conductive film stacks of Examples 42, 43, and 44 were produced inthe same manner as Example 41 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 45

In the conductive film stack produced in Example 45, the small lattices70 had an angle θ of 32° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 46 to 48

The conductive film stacks of Examples 46, 47, and 48 were produced inthe same manner as Example 45 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 49

In the conductive film stack produced in Example 49, the small lattices70 had an angle θ of 36° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 50 to 52

The conductive film stacks of Examples 50, 51, and 52 were produced inthe same manner as Example 49 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 53

In the conductive film stack produced in Example 53, the small lattices70 had an angle θ of 37° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 54 to 56

The conductive film stacks of Examples 54, 55, and 56 were produced inthe same manner as Example 53 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 57

In the conductive film stack produced in Example 57, the small lattices70 had an angle θ of 39° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 58 to 60

The conductive film stacks of Examples 58, 59, and 60 were produced inthe same manner as Example 57 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 61

In the conductive film stack produced in Example 61, the small lattices70 had an angle θ of 40° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 62 to 64

The conductive film stacks of Examples 62, 63, and 64 were produced inthe same manner as Example 61 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 65

In the conductive film stack produced in Example 65, the small lattices70 had an angle θ of 44° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 66 to 68

The conductive film stacks of Examples 66, 67, and 68 were produced inthe same manner as Example 65 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 69

In the conductive film stack produced in Example 69, the small lattices70 had an angle θ of 45° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 70 to 72

The conductive film stacks of Examples 70, 71, and 72 were produced inthe same manner as Example 69 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 73

In the conductive film stack produced in Example 73, the small lattices70 had an angle θ of 46° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 74 to 76

The conductive film stacks of Examples 74, 75, and 76 were produced inthe same manner as Example 73 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 77

In the conductive film stack produced in Example 77, the small lattices70 had an angle θ of 50° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 78 to 80

The conductive film stacks of Examples 78, 79, and 80 were produced inthe same manner as Example 77 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 81

In the conductive film stack produced in Example 81, the small lattices70 had an angle θ of 51° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 82 to 84

The conductive film stacks of Examples 82, 83, and 84 were produced inthe same manner as Example 81 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 85

In the conductive film stack produced in Example 85, the small lattices70 had an angle θ of 53° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 86 to 88

The conductive film stacks of Examples 86, 87, and 88 were produced inthe same manner as Example 85 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 89

In the conductive film stack produced in Example 89, the small lattices70 had an angle θ of 54° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 90 to 92

The conductive film stacks of Examples 90, 91, and 92 were produced inthe same manner as Example 89 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 93

In the conductive film stack produced in Example 93, the small lattices70 had an angle θ of 58° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 94 to 96

The conductive film stacks of Examples 94, 95, and 96 were produced inthe same manner as Example 93 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Example 97

In the conductive film stack produced in Example 97, the small lattices70 had an angle θ of 60° between the first side 70 a and the firstdirection, a side length of 200 μm, and a line width of 6 μm.

Examples 98 to 100

The conductive film stacks of Examples 98, 99, and 100 were produced inthe same manner as Example 97 except that the small lattices 70 had sidelengths of 220, 240, and 400 μm respectively.

Comparative Example 11

In the conductive film stack produced in Comparative Example 11, thesmall lattices 70 had an angle θ of 29° between the first side 70 a andthe first direction, a side length of 200 μm, and a line width of 6 μm.

Comparative Examples 12 and 13

The conductive film stacks of Comparative Examples 12 and 13 wereproduced in the same manner as Comparative Example 11 except that thesmall lattices 70 had side lengths of 300 and 400 μm respectively.

Comparative Example 14

In the conductive film stack produced in Comparative Example 14, thesmall lattices 70 had an angle θ of 61° between the first side 70 a andthe first direction, a side length of 200 μm, and a line width of 6 μm.

Comparative Examples 15 and 16

The conductive film stacks of Comparative Examples 15 and 16 wereproduced in the same manner as Comparative Example 14 except that thesmall lattices 70 had side lengths of 300 and 400 μm respectively.

[Evaluation]

The opening ratio calculation and the moire evaluation of the conductivefilm stacks were carried out in the same manner as First Example. Theresults are shown in Tables 5 and 6.

TABLE 5 Display device Small lattice Vertical Side Line Horizontal pixelOpening Moire length width pixel pitch pitch Ratio eval- Angle (μm) (μm)Ph (μm) Pv (μm) (%) uation Comparative 29° 200 6 192 192 94 D Example 11Comparative 29° 300 6 192 192 96 D Example 12 Comparative 29° 400 6 192192 97 D Example 13 Example 41 30° 200 6 192 192 94 C Example 42 30° 2206 192 192 95 B Example 43 30° 240 6 192 192 95 B Example 44 30° 400 6192 192 97 C Example 45 32° 200 6 192 192 94 B Example 46 32° 220 6 192192 95 A Example 47 32° 240 6 192 192 95 A Example 48 32° 400 6 192 19297 B Example 49 36° 200 6 192 192 94 B Example 50 36° 220 6 192 192 95 AExample 51 36° 240 6 192 192 95 A Example 52 36° 400 6 192 192 97 BExample 53 37° 200 6 192 192 94 B Example 54 37° 220 6 192 192 95 AExample 55 37° 240 6 192 192 95 A Example 56 37° 400 6 192 192 97 BExample 57 39° 200 6 192 192 94 B Example 58 39° 220 6 192 192 95 AExample 59 39° 240 6 192 192 95 A Example 60 39° 400 6 192 192 97 BExample 61 40° 200 6 192 192 94 C Example 62 40° 220 6 192 192 95 BExample 63 40° 240 6 192 192 95 B Example 64 40° 400 6 192 192 97 CExample 65 44° 200 6 192 192 94 C Example 66 44° 220 6 192 192 95 BExample 67 44° 240 6 192 192 95 B Example 68 44° 400 6 192 192 97 CExample 69 45° 200 6 192 192 94 C Example 70 45° 220 6 192 192 95 CExample 71 45° 240 6 192 192 95 C Example 72 45° 400 6 192 192 97 C

TABLE 6 Display device Small lattice Vertical Side Line Horizontal pixelOpening Moire length width pixel pitch pitch Ratio eval- Angle (μm) (μm)Ph (μm) Pv (μm) (%) uation Example 73 46° 200 6 192 192 94 C Example 7446° 220 6 192 192 96 B Example 75 46° 240 6 192 192 97 B Example 76 46°400 6 192 192 94 C Example 77 50° 200 6 192 192 95 C Example 78 50° 2206 192 192 95 B Example 79 50° 240 6 192 192 97 B Example 80 50° 400 6192 192 94 C Example 81 51° 200 6 192 192 95 B Example 82 51° 220 6 192192 95 A Example 83 51° 240 6 192 192 97 A Example 84 51° 400 6 192 19294 B Example 85 53° 200 6 192 192 95 B Example 86 53° 220 6 192 192 95 AExample 87 53° 240 6 192 192 97 A Example 88 53° 400 6 192 192 94 BExample 89 54° 200 6 192 192 95 B Example 90 54° 220 6 192 192 95 AExample 91 54° 240 6 192 192 97 A Example 92 54° 400 6 192 192 94 BExample 93 58° 200 6 192 192 95 B Example 94 58° 220 6 192 192 95 AExample 95 58° 240 6 192 192 97 A Example 96 58° 400 6 192 192 94 BExample 97 60° 200 6 192 192 95 C Example 98 60° 220 6 192 192 95 BExample 99 60° 240 6 192 192 97 B Example 100 60° 400 6 192 192 94 CComparative 61° 200 6 192 192 95 D Example 14 Comparative 61° 300 6 192192 95 D Example 15 Comparative 61° 400 6 192 192 97 D Example 16

As shown in Tables 5 and 6, the conductive film stacks of ComparativeExamples 11 to 16 were evaluated as D, and had highly visible moire. OfExamples 41 to 100, in Examples 41, 44, 61, 64, 65, 68 to 73, 76, 77,80, 97, and 100, the moire was only slightly visible to an acceptableextent. In the other Examples, Examples 42, 43, 45, 48, 49, 52, 53, 56,57, 60, 62, 63, 66, 67, 74, 75, 78, 79, 81, 84, 85, 88, 89, 92, 93, 96,98, and 99 were desirable because the moire was hardly generated. Inparticular, in Examples 46, 47, 50, 51, 54, 55, 58, 59, 82, 83, 86, 87,90, 91, 94, and 95, the moire generation was not observed because thesmall lattices 70 had an angle θ of 32° to 39° between the first side 70a and the first direction and a side length of 220 μm or 240 μm.

Projected capacitive touch panels 50 were produced using the conductivefilm stacks 54 of Examples 41 to 100 respectively. When the touch panels50 were operated by a finger touch, they exhibited high response speedsand excellent detection sensitivities. Furthermore, when two or morepoints were touched, the touch panels 50 exhibited the same excellentproperties. Thus, it was confirmed that the touch panels 50 were capableof multi-touch detection.

Third Example

In Third Example, conductive film stacks of Comparative Examples 21 to26 and Examples 101 to 160 were produced respectively. The opening ratioof each conductive film stack was calculated, and the moire of eachconductive film stack was evaluated. The components, calculationresults, and evaluation results of Comparative Examples 21 to 26 andExamples 101 to 160 are shown in Tables 7 and 8.

Examples 101 to 160 and Comparative Examples 21 to 26 (PhotosensitiveSilver Halide Material)

A roll photosensitive silver halide material was prepared in the samemanner as First Example.

(Exposure)

An A4 (210 mm×297 mm) sized area of the first transparent substrate 12Awas exposed in the pattern of the first conductive film 10A shown inFIGS. 7 and 9, and an A4 sized area of the second transparent substrate12B was exposed in the pattern of the second conductive film 10B shownin FIGS. 7 and 13. The exposure was carried out using patternedphotomasks and a parallel light from a light source of a high-pressuremercury lamp.

(Development Treatment)

The exposed photosensitive material was treated with the above treatmentagents of First Example using an automatic processor FG-710PTSmanufactured by FUJIFILM Corporation under the following conditions. Adevelopment treatment was carried out at 35° C. for 30 seconds, afixation treatment was carried out at 34° C. for 23 seconds, and then awater washing treatment was carried out for 20 seconds at a water flowrate of 5 L/min.

Example 101

In the conductive film stack produced in Example 101, the first largelattices 68A in the first conductive part 14A of the first conductivefilm 10A had an aspect ratio (Lva/Lha) of 0.5773, the second largelattices 68B in the second conductive part 14B of the second conductivefilm 10B had an aspect ratio (Lvb/Lhb) of 0.5773, and the thin metalwires 16 had a thin wire pitch Ps of 200 μm and a line width of 6 μm.

Examples 102 to 104

The conductive film stacks of Examples 102, 103, and 104 were producedin the same manner as Example 101 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 105

In the conductive film stack produced in Example 105, the first largelattices 68A and the second large lattices 68B had an aspect ratio of0.6248, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 106 to 108

The conductive film stacks of Examples 106, 107, and 108 were producedin the same manner as Example 105 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 109

In the conductive film stack produced in Example 109, the first largelattices 68A and the second large lattices 68B had an aspect ratio of0.7266, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 110 to 112

The conductive film stacks of Examples 110, 111, and 112 were producedin the same manner as Example 109 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 113

In the conductive film stack produced in Example 113, the first largelattices 68A and the second large lattices 68B had an aspect ratio of0.7535, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 114 to 116

The conductive film stacks of Examples 114, 115, and 116 were producedin the same manner as Example 113 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 117

In the conductive film stack produced in Example 117, the first largelattices 68A and the second large lattices 68B had an aspect ratio of0.8098, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 118 to 120

The conductive film stacks of Examples 118, 119, and 120 were producedin the same manner as Example 117 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 121

In the conductive film stack produced in Example 121, the first largelattices 68A and the second large lattices 68B had an aspect ratio of0.8391, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 122 to 124

The conductive film stacks of Examples 122, 123, and 124 were producedin the same manner as Example 121 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 125

In the conductive film stack produced in Example 125, the first largelattices 68A and the second large lattices 68B had an aspect ratio of0.9657, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 126 to 128

The conductive film stacks of Examples 126, 127, and 128 were producedin the same manner as Example 125 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 129

In the conductive film stack produced in Example 129, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.0000, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 130 to 132

The conductive film stacks of Examples 130, 131, and 132 were producedin the same manner as Example 129 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 133

In the conductive film stack produced in Example 133, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.0356, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 134 to 136

The conductive film stacks of Examples 134, 135, and 136 were producedin the same manner as Example 133 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 137

In the conductive film stack produced in Example 137, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.1917, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 138 to 140

The conductive film stacks of Examples 138, 139, and 140 were producedin the same manner as Example 137 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 141

In the conductive film stack produced in Example 141, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.2349, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 142 to 144

The conductive film stacks of Examples 142, 143, and 144 were producedin the same manner as Example 141 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 145

In the conductive film stack produced in Example 145, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.3271, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 146 to 148

The conductive film stacks of Examples 146, 147, and 148 were producedin the same manner as Example 145 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 149

In the conductive film stack produced in Example 149, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.3763, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 150 to 152

The conductive film stacks of Examples 150, 151, and 152 were producedin the same manner as Example 153 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 153

In the conductive film stack produced in Example 153, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.6004, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 154 to 156

The conductive film stacks of Examples 154, 155, and 156 were producedin the same manner as Example 149 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Example 157

In the conductive film stack produced in Example 157, the first largelattices 68A and the second large lattices 68B had an aspect ratio of1.7321, and the thin metal wires 16 had a thin wire pitch Ps of 200 μmand a line width of 6 μm.

Examples 158 to 160

The conductive film stacks of Examples 158, 159, and 160 were producedin the same manner as Example 157 except that the thin metal wires 16had thin wire pitches Ps of 220, 240, and 400 μm respectively.

Comparative Example 21

In the conductive film stack produced in Comparative Example 21, thefirst large lattices 68A and the second large lattices 68B had an aspectratio of 0.5543, and the thin metal wires 16 had a thin wire pitch Ps of200 μm and a line width of 6 μm.

Comparative Examples 22 and 23

The conductive film stacks of Comparative Example 22 and 23 wereproduced in the same manner as Comparative Example 21 except that thethin metal wires 16 had thin wire pitches Ps of 300 and 400 μmrespectively.

Comparative Example 24

In the conductive film stack produced in Comparative Example 24, thefirst large lattices 68A and the second large lattices 68B had an aspectratio of 1.8040, and the thin metal wires 16 had a thin wire pitch Ps of200 μm and a line width of 6 μm.

Comparative Examples 25 and 26

The conductive film stacks of Comparative Example 25 and 26 wereproduced in the same manner as Comparative Example 24 except that thethin metal wires 16 had thin wire pitches Ps of 300 and 400 μmrespectively.

[Evaluation]

The opening ratio calculation and the moire evaluation of the conductivefilm stacks were carried out in the same manner as First Example. Theresults are shown in Tables 7 and 8.

TABLE 7 Display device Large lattice Vertical Pitch Line Horizontalpixel Opening Moire Aspect Ps width pixel pitch pitch Ratio eval- ratio(μm) (μm) Ph (μm) Pv (μm) (%) uation Comparative 0.5543 200 6 192 192 94D Example 21 Comparative 0.5543 300 6 192 192 96 D Example 22Comparative 0.5543 400 6 192 192 97 D Example 23 Example 101 0.5773 2006 192 192 94 C Example 102 0.5773 220 6 192 192 95 B Example 103 0.5773240 6 192 192 95 B Example 104 0.5773 400 6 192 192 97 C Example 1050.6248 200 6 192 192 94 B Example 106 0.6248 220 6 192 192 95 A Example107 0.6248 240 6 192 192 95 A Example 108 0.6248 400 6 192 192 97 BExample 109 0.7266 200 6 192 192 94 B Example 110 0.7266 220 6 192 19295 A Example 111 0.7266 240 6 192 192 95 A Example 112 0.7266 400 6 192192 97 B Example 113 0.7535 200 6 192 192 94 B Example 114 0.7535 220 6192 192 95 A Example 115 0.7535 240 6 192 192 95 A Example 116 0.7535400 6 192 192 97 B Example 117 0.8098 200 6 192 192 94 B Example 1180.8098 220 6 192 192 95 A Example 119 0.8098 240 6 192 192 95 A Example120 0.8098 400 6 192 192 97 B Example 121 0.8391 200 6 192 192 94 CExample 122 0.8391 220 6 192 192 95 B Example 123 0.8391 240 6 192 19295 B Example 124 0.8391 400 6 192 192 97 C Example 125 0.9657 200 6 192192 94 C Example 126 0.9657 220 6 192 192 95 B Example 127 0.9657 240 6192 192 95 B Example 128 0.9657 400 6 192 192 97 C Example 129 1.0000200 6 192 192 94 C Example 130 1.0000 220 6 192 192 95 C Example 1311.0000 240 6 192 192 95 C Example 132 1.0000 400 6 192 192 97 C

TABLE 8 Display device Large lattice Vertical Pitch Line Horizontalpixel Opening Moire Aspect Ps width pixel pitch pitch Ratio eval- ratio(μm) (μm) Ph (μm) Pv (μm) (%) uation Example 133 1.0356 200 6 192 192 94C Example 134 1.0356 220 6 192 192 96 B Example 135 1.0356 240 6 192 19297 B Example 136 1.0356 400 6 192 192 94 C Example 137 1.1917 200 6 192192 95 C Example 138 1.1917 220 6 192 192 95 B Example 139 1.1917 240 6192 192 97 B Example 140 1.1917 400 6 192 192 94 C Example 141 1.2349200 6 192 192 95 B Example 142 1.2349 220 6 192 192 95 A Example 1431.2349 240 6 192 192 97 A Example 144 1.2349 400 6 192 192 94 B Example145 1.3271 200 6 192 192 95 B Example 146 1.3271 220 6 192 192 95 AExample 147 1.3271 240 6 192 192 97 A Example 148 1.3271 400 6 192 19294 B Example 149 1.3763 200 6 192 192 95 B Example 150 1.3763 220 6 192192 95 A Example 151 1.3763 240 6 192 192 97 A Example 152 1.3763 400 6192 192 94 B Example 153 1.6004 200 6 1 92 192 95 B Example 154 1.6004220 6 192 192 95 A Example 155 1.6004 240 6 192 192 97 A Example 1561.6004 400 6 192 192 94 B Example 157 1.7321 200 6 192 192 95 C Example158 1.7321 220 6 192 192 95 B Example 159 1.7321 240 6 192 192 97 BExample 160 1.7321 400 6 192 192 94 C Comparative 1.8040 200 6 192 19295 D Example 24 Comparative 1.8040 300 6 192 192 95 D Example 25Comparative 1.8040 400 6 192 192 97 D Example 26

As shown in Tables 7 and 8, the conductive film stacks of ComparativeExamples 21 to 26 were evaluated as D, and had highly visible moire. OfExamples 101 to 160, in Examples 101, 104, 121, 124, 125, 128 to 133,136, 137, 140, 157, and 160, the moire was only slightly visible to anacceptable extent. In the other Examples, Examples 102, 103, 105, 108,109, 112, 113, 116, 117, 120, 122, 123, 126, 127, 134, 135, 138, 139,141, 144, 145, 148, 149, 152, 153, 156, 158, and 159 were desirablebecause the moire was hardly generated. In particular, in Examples 106,107, 110, 111, 114, 115, 118, 119, 142, 143, 146, 147, 150, 151, 154,and 155, the moire generation was not observed because the aspect ratioof the first large lattices 68A and the second large lattices 68B wasmore than 0.62 and less than 0.81, or more than 1.23 and less than 1.61,and the thin metal wires 16 had a thin wire pitch Ps of 220 μm or 240μm.

Projected capacitive touch panels 50 were produced using the conductivefilm stacks 54 of Examples 101 to 160 respectively. When the touchpanels 50 were operated by a finger touch, they exhibited high responsespeeds and excellent detection sensitivities. Furthermore, when two ormore points were touched, the touch panels 50 exhibited the sameexcellent properties. Thus, it was confirmed that the touch panels 50were capable of multi-touch detection.

Fourth Example

In Fourth Example, conductive film stacks of Comparative Examples 31 to36 and Examples 161 to 220 were produced respectively. The opening ratioof each conductive film stack was calculated, and the moire of eachconductive film stack was evaluated. The components, calculationresults, and evaluation results of Comparative Examples 31 to 36 andExamples 161 to 220 are shown in Tables 9 and 10.

Examples 161 to 220 and Comparative Examples 31 to 36

The conductive film stacks were produced and evaluated in the samemanner as Third Example except that the first conductive film 110A wasexposed in the pattern shown in FIG. 19 and the second conductive film110B was exposed in the pattern shown in FIG. 20. The aspect ratio ofthe rhombus formed between the two first upper bases 126A arranged inthe horizontal direction was considered as the aspect ratio of the firstlarge lattice 118A in the first conductive part 114A of the firstconductive film 110A, and the aspect ratio of the rhombus formed betweenthe two horizontally extending corners was considered as the aspectratio of the second large lattice 118B in the second conductive part114B of the second conductive film 110B.

Example 161

In the conductive film stack produced in Example 161, the first largelattices 118A in the first conductive part 114A of the first conductivefilm 110A had an aspect ratio (Lva/Lha) of 0.5773, the second largelattices 118B in the second conductive part 114B of the secondconductive film 110B had an aspect ratio (Lvb/Lhb) of 0.5773, and thethin metal wires 16 had a thin wire pitch Ps of 200 μm and a line widthof 6 μm.

Examples 162 to 220 and Comparative Examples 31 to 36

The conductive film stacks of Examples 162 to 220 were produced in thesame manner as Examples 102 to 160 of Third Example respectively. Theconductive film stacks of Comparative Examples 31 to 36 were produced inthe same manner as Comparative Examples 21 to 26 of Third Examplerespectively.

TABLE 9 Display device Large lattice Vertical Pitch Line Horizontalpixel Opening Moire Aspect Ps width pixel pitch pitch Ratio eval- ratio(μm) (μm) Ph (μm) Pv (μm) (%) uation Comparative 0.5543 200 6 192 192 95D Example 31 Comparative 0.5543 300 6 192 192 96 D Example 32Comparative 0.5543 400 6 192 192 97 D Example 33 Example 161 0.5773 2006 192 192 94 C Example 162 0.5773 220 6 192 192 94 B Example 163 0.5773240 6 192 192 95 B Example 164 0.5773 400 6 192 192 97 B Example 1650.6248 200 6 192 192 94 B Example 166 0.6248 220 6 192 192 95 A Example167 0.6248 240 6 192 192 95 A Example 168 0.6248 400 6 192 192 97 BExample 169 0.7266 200 6 192 192 95 B Example 170 0.7266 220 6 192 19295 A Example 171 0.7266 240 6 192 192 95 A Example 172 0.7266 400 6 192192 97 B Example 173 0.7535 200 6 192 192 94 B Example 174 0.7535 220 6192 192 95 A Example 175 0.7535 240 6 192 192 96 A Example 176 0.7535400 6 192 192 97 B Example 177 0.8098 200 6 192 192 95 B Example 1780.8098 220 6 192 192 95 A Example 179 0.8098 240 6 192 192 95 A Example180 0.8098 400 6 192 192 97 B Example 181 0.8391 200 6 192 192 94 CExample 182 0.8391 220 6 192 192 95 B Example 183 0.8391 240 6 192 19295 B Example 184 0.8391 400 6 192 192 97 C Example 185 0.9657 200 6 192192 94 C Example 186 0.9657 220 6 192 192 95 B Example 187 0.9657 240 6192 192 96 B Example 188 0.9657 400 6 192 192 97 C Example 189 1.0000200 6 192 192 94 C Example 190 1.0000 220 6 192 192 95 B Example 1911.0000 240 6 192 192 95 B Example 192 1.0000 400 6 192 192 97 C

TABLE 10 Display device Large lattice Vertical Pitch Line Horizontalpixel Opening Moire Aspect Ps width pixel pitch pitch Ratio eval- ratio(μm) (μm) Ph (μm) Pv (μm) (%) uation Example 193 1.0356 200 6 192 192 95C Example 194 1.0356 220 6 192 192 96 B Example 195 1.0356 240 6 192 19297 B Example 196 1.0356 400 6 192 192 94 B Example 197 1.1917 200 6 192192 95 B Example 198 1.1917 220 6 192 192 95 B Example 199 1.1917 240 6192 192 97 B Example 200 1.1917 400 6 192 192 94 C Example 201 1.2349200 6 192 192 95 B Example 202 1.2349 220 6 192 192 96 A Example 2031.2349 240 6 192 192 97 A Example 204 1.2349 400 6 192 192 94 B Example205 1.3271 200 6 192 192 95 B Example 206 1.3271 220 6 192 192 95 AExample 207 1.3271 240 6 192 192 97 A Example 208 1.3271 400 6 192 19294 B Example 209 1.3763 200 6 192 192 95 B Example 210 1.3763 220 6 192192 95 A Example 211 1.3763 240 6 192 192 97 A Example 212 1.3763 400 6192 192 95 B Example 213 1.6004 200 6 192 192 95 B Example 214 1.6004220 6 192 192 96 A Example 215 1.6004 240 6 192 192 97 A Example 2161.6004 400 6 192 192 94 B Example 217 1.7321 200 6 192 192 95 C Example218 1.7321 220 6 192 192 94 B Example 219 1.7321 240 6 192 192 97 BExample 220 1.7321 400 6 192 192 94 C Comparative 1.8040 200 6 192 19295 D Example 34 Comparative 1.8040 300 6 192 192 94 D Example 35Comparative 1.8040 400 6 192 192 97 D Example 36

As shown in Tables 9 and 10, the conductive film stacks of ComparativeExamples 31 to 36 were evaluated as D, and had highly visible moire. OfExamples 161 to 220, in Examples 161, 181, 184, 185, 188, 189, 192, 193,200, 217, and 220, the moire was only slightly visible to an acceptableextent. In the other Examples, Examples 162 to 165, 168, 169, 172, 173,176, 177, 180, 182, 183, 186, 187, 190, 191, 194 to 199, 201, 204, 205,208, 209, 212, 213, 216, 218, and 219 were desirable because the moirewas hardly generated. In particular, in Examples 166, 167, 170, 171,174, 175, 178, 179, 202, 203, 206, 207, 210, 211, 214, and 215, themoire generation was not observed because the aspect ratio of the firstlarge lattices 118A and the second large lattices 118B was more than0.62 and less than 0.81, or more than 1.23 and less than 1.61, and thethin metal wires 16 had a thin wire pitch Ps of 220 μm or 240 μm.

Projected capacitive touch panels 50 were produced using the conductivefilm stacks 104 of Examples 161 to 220 respectively. When the touchpanels 50 were operated by a finger touch, they exhibited high responsespeeds and excellent detection sensitivities. Furthermore, when two ormore points were touched, the touch panels 50 exhibited the sameexcellent properties. Thus, it was confirmed that the touch panels 50were capable of multi-touch detection.

It is to be understood that the conductive film and the display deviceof the present invention are not limited to the above embodiments, andvarious changes and modifications may be made therein without departingfrom the scope of the present invention.

1. A conductive member for a touch panel comprising a substrate, and aconductive part disposed on one main surface of the substrate, whereinthe conductive part contains two or more conductive patterns composed ofa thin metal wire, the conductive patterns extend in a first directionand are arranged in a second direction perpendicular to the firstdirection, the conductive patterns each contain a combination of two ormore small lattices, the small lattices each have a rhombic shape, atleast one side of each small lattice is at an angle of 32° to 44° or 46°to 58° with respect to the first direction, and at least one vertexangle of each small lattice is twice an angle that is formed by the oneside and the first direction.
 2. The conductive member according toclaim 1, wherein a line width of the thin metal wire is 2 to 7 μm. 3.The conductive member according to claim 2, wherein a thickness of thethin metal wire is less than 9 μm.
 4. The conductive member according toclaim 1, wherein at least one side of each small lattice is at an angleof 32° to 39° with respect to the first direction.
 5. The conductivemember according to claim 1, wherein at least one side of each smalllattice is at an angle of 46° to 60° with respect to the firstdirection.
 6. The conductive member according to claim 1, wherein atleast one side of each small lattice is at an angel of 51° to 58° withrespect to the first direction.
 7. The conductive member according toclaim 1, wherein the conductive patterns each contain two or more largelattices that are connected in series in the first direction, the largelattices each contain a combination of two or more small lattices.
 8. Atouch sensor comprising the conductive member according to claim
 1. 9. Atouch panel comprising the conductive member according to claim
 1. 10. Aconductive member comprising a first conductive part, a secondconductive part electrically isolated from the first conductive part,wherein a combined pattern of the first conductive part and the secondconductive part contains a mesh pattern, an opening of the mesh patternhas a rhombic shape, a vertex angle of the rhombic shape has at an angleof 60° to 88° or 92° to 120°.
 11. A touch sensor comprising theconductive member according to claim
 10. 12. A touch panel comprisingthe conductive member according to claim
 10. 13. A conductive membercomprising a first conductive part, a second conductive partelectrically isolated from the first conductive part, wherein the firstconductive part contains two or more first conductive patterns, thefirst conductive patterns each extend in a first direction and arearranged in a second direction perpendicular to the first direction, thesecond conductive part contains two or more second conductive patterns,the second conductive patterns each extend in the second direction andare arranged in the first direction, the first conductive patterns andthe second conductive patterns each contain a combination of two or moresmall lattices, the small lattices each have a rhombic shape, at leastone side of each small lattice is at an angle of 30° to 44° or 46° to60° with respect to the first direction, at least one vertex angle ofeach small lattice is twice an angle that is formed by the one side andthe first direction.
 14. The conductive member according to claim 13,wherein at least one side of each small lattice is at an angle of 32° to44° or 46° to 58° with respect to the first direction.
 15. A touchsensor comprising the conductive member according to claim
 13. 16. Atouch panel comprising the conductive member according to claim
 13. 17.A conductive member comprising a first conductive part, a secondconductive part electrically isolated from the first conductive part,wherein the first conductive part and the second conductive part containa mesh pattern, an opening of the mesh pattern has a rhombic shape, avertex angle of the rhombic shape has at an angle of 60° to 88° or 92°to 120°.
 18. A touch sensor comprising the conductive member accordingto claim
 17. 19. A touch panel comprising the conductive memberaccording to claim 17.